Spectral shape and broadening of emission from AlGaInP light-emitting diodes

N. C. Chen; W. C. Lien; Y. K. Yang; C. Shen; Y. S. Wang; Jenn-Fang Chen

doi:10.1063/1.3243319

Spectral shape and broadening of emission from AlGaInP light-emitting diodes

N. C. Chen, W. C. Lien, Y. K. Yang, C. Shen, Y. S. Wang, Jenn-Fang Chen

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

This work presents a model for describing the shape of the spontaneous emission spectrum from a quantum-well structure. A function is introduced to specify the probability distribution for the effective band gap. Based on this model, the coexisting carrier thermal broadening and effective band gap broadening in the spontaneous emission spectrum can be separated from each other. Applying this model to the spectra of AlGaInP light-emitting diodes reveals that the probability distribution functions are almost Gaussian. Therefore, the emission spectra can be described by an analytical expression with fitted parameters. Possible reasons for this band gap broadening are discussed. The determination of the junction temperatures from the emission spectra and possible deviations of the results thus determined are also elaborated.

Original language	English
Article number	074514
Journal	Journal of Applied Physics
Volume	106
Issue number	7
DOIs	https://doi.org/10.1063/1.3243319
State	Published - 23 Oct 2009

Access to Document

10.1063/1.3243319

Cite this

@article{bba52a9861d54361912766fb737300a5,

title = "Spectral shape and broadening of emission from AlGaInP light-emitting diodes",

abstract = "This work presents a model for describing the shape of the spontaneous emission spectrum from a quantum-well structure. A function is introduced to specify the probability distribution for the effective band gap. Based on this model, the coexisting carrier thermal broadening and effective band gap broadening in the spontaneous emission spectrum can be separated from each other. Applying this model to the spectra of AlGaInP light-emitting diodes reveals that the probability distribution functions are almost Gaussian. Therefore, the emission spectra can be described by an analytical expression with fitted parameters. Possible reasons for this band gap broadening are discussed. The determination of the junction temperatures from the emission spectra and possible deviations of the results thus determined are also elaborated.",

author = "Chen, {N. C.} and Lien, {W. C.} and Yang, {Y. K.} and C. Shen and Wang, {Y. S.} and Jenn-Fang Chen",

year = "2009",

month = oct,

day = "23",

doi = "10.1063/1.3243319",

language = "English",

volume = "106",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Spectral shape and broadening of emission from AlGaInP light-emitting diodes

AU - Chen, N. C.

AU - Lien, W. C.

AU - Yang, Y. K.

AU - Shen, C.

AU - Wang, Y. S.

AU - Chen, Jenn-Fang

PY - 2009/10/23

Y1 - 2009/10/23

N2 - This work presents a model for describing the shape of the spontaneous emission spectrum from a quantum-well structure. A function is introduced to specify the probability distribution for the effective band gap. Based on this model, the coexisting carrier thermal broadening and effective band gap broadening in the spontaneous emission spectrum can be separated from each other. Applying this model to the spectra of AlGaInP light-emitting diodes reveals that the probability distribution functions are almost Gaussian. Therefore, the emission spectra can be described by an analytical expression with fitted parameters. Possible reasons for this band gap broadening are discussed. The determination of the junction temperatures from the emission spectra and possible deviations of the results thus determined are also elaborated.

AB - This work presents a model for describing the shape of the spontaneous emission spectrum from a quantum-well structure. A function is introduced to specify the probability distribution for the effective band gap. Based on this model, the coexisting carrier thermal broadening and effective band gap broadening in the spontaneous emission spectrum can be separated from each other. Applying this model to the spectra of AlGaInP light-emitting diodes reveals that the probability distribution functions are almost Gaussian. Therefore, the emission spectra can be described by an analytical expression with fitted parameters. Possible reasons for this band gap broadening are discussed. The determination of the junction temperatures from the emission spectra and possible deviations of the results thus determined are also elaborated.

UR - http://www.scopus.com/inward/record.url?scp=70350090672&partnerID=8YFLogxK

U2 - 10.1063/1.3243319

DO - 10.1063/1.3243319

M3 - Article

AN - SCOPUS:70350090672

SN - 0021-8979

VL - 106

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

M1 - 074514

ER -

Spectral shape and broadening of emission from AlGaInP light-emitting diodes

Abstract

Access to Document

Other files and links

Fingerprint

Cite this