SPDT GaAs switches with copper metallized interconnects

Y. C. Wu; Edward Yi Chang; Y. C. Lin; Heng-Tung Hsu; S. H. Chen; W. C. Wu; L. H. Chu; C. Y. Chang

doi:10.1109/LMWC.2006.890340

SPDT GaAs switches with copper metallized interconnects

Y. C. Wu^*, Edward Yi Chang, Y. C. Lin, Heng-Tung Hsu, S. H. Chen, W. C. Wu, L. H. Chu, C. Y. Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Copper metallized AlGaAs/InGaAs psedomophic high-electron-mobility transistor (PHEMT) single-pole-double-throw (SPDT) switches utilizing platinum (Pt, 70 nm) as the diffusion barrier is reported for the first time. In comparison with the Au metallized switches, the Cu metallized SPDT switches exhibited comparable performance with insertion loss of less than 0.5 dB, isolation larger than 35 dB and the input power for one dB compression (input P_{1 db}) of 27 dBm at 2.5 GHz. These switches were annealed at 250° for 20 h for thermal stability test and showed no degradation of the dc characteristics after the annealing. Also, after 144 h of high temperature storage life (HTSL) environment test, these switches still remained excellent and reliable radio frequency (RF) characteristics. It is successfully demonstrated for the first time that the copper metallization using Pt as the diffusion barrier could be applied to the GaAs monolithic microwave integrated circuits switch fabrication with good RF performance and reliability.

Original language	English
Pages (from-to)	133-135
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	17
Issue number	2
DOIs	https://doi.org/10.1109/LMWC.2006.890340
State	Published - Feb 2007

Keywords

Copper metallization
GaAs psedomophic high-electron-mobility transistor (PHEMT)
Platinum
Single-pole-double-throw (SPDT)
Switch

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10.1109/LMWC.2006.890340

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title = "SPDT GaAs switches with copper metallized interconnects",

abstract = "Copper metallized AlGaAs/InGaAs psedomophic high-electron-mobility transistor (PHEMT) single-pole-double-throw (SPDT) switches utilizing platinum (Pt, 70 nm) as the diffusion barrier is reported for the first time. In comparison with the Au metallized switches, the Cu metallized SPDT switches exhibited comparable performance with insertion loss of less than 0.5 dB, isolation larger than 35 dB and the input power for one dB compression (input P1 db) of 27 dBm at 2.5 GHz. These switches were annealed at 250° for 20 h for thermal stability test and showed no degradation of the dc characteristics after the annealing. Also, after 144 h of high temperature storage life (HTSL) environment test, these switches still remained excellent and reliable radio frequency (RF) characteristics. It is successfully demonstrated for the first time that the copper metallization using Pt as the diffusion barrier could be applied to the GaAs monolithic microwave integrated circuits switch fabrication with good RF performance and reliability.",

keywords = "Copper metallization, GaAs psedomophic high-electron-mobility transistor (PHEMT), Platinum, Single-pole-double-throw (SPDT), Switch",

author = "Wu, {Y. C.} and Chang, {Edward Yi} and Lin, {Y. C.} and Heng-Tung Hsu and Chen, {S. H.} and Wu, {W. C.} and Chu, {L. H.} and Chang, {C. Y.}",

year = "2007",

month = feb,

doi = "10.1109/LMWC.2006.890340",

language = "English",

volume = "17",

pages = "133--135",

journal = "IEEE Microwave and Wireless Components Letters",

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T1 - SPDT GaAs switches with copper metallized interconnects

AU - Wu, Y. C.

AU - Chang, Edward Yi

AU - Lin, Y. C.

AU - Hsu, Heng-Tung

AU - Chen, S. H.

AU - Wu, W. C.

AU - Chu, L. H.

AU - Chang, C. Y.

PY - 2007/2

Y1 - 2007/2

N2 - Copper metallized AlGaAs/InGaAs psedomophic high-electron-mobility transistor (PHEMT) single-pole-double-throw (SPDT) switches utilizing platinum (Pt, 70 nm) as the diffusion barrier is reported for the first time. In comparison with the Au metallized switches, the Cu metallized SPDT switches exhibited comparable performance with insertion loss of less than 0.5 dB, isolation larger than 35 dB and the input power for one dB compression (input P1 db) of 27 dBm at 2.5 GHz. These switches were annealed at 250° for 20 h for thermal stability test and showed no degradation of the dc characteristics after the annealing. Also, after 144 h of high temperature storage life (HTSL) environment test, these switches still remained excellent and reliable radio frequency (RF) characteristics. It is successfully demonstrated for the first time that the copper metallization using Pt as the diffusion barrier could be applied to the GaAs monolithic microwave integrated circuits switch fabrication with good RF performance and reliability.

AB - Copper metallized AlGaAs/InGaAs psedomophic high-electron-mobility transistor (PHEMT) single-pole-double-throw (SPDT) switches utilizing platinum (Pt, 70 nm) as the diffusion barrier is reported for the first time. In comparison with the Au metallized switches, the Cu metallized SPDT switches exhibited comparable performance with insertion loss of less than 0.5 dB, isolation larger than 35 dB and the input power for one dB compression (input P1 db) of 27 dBm at 2.5 GHz. These switches were annealed at 250° for 20 h for thermal stability test and showed no degradation of the dc characteristics after the annealing. Also, after 144 h of high temperature storage life (HTSL) environment test, these switches still remained excellent and reliable radio frequency (RF) characteristics. It is successfully demonstrated for the first time that the copper metallization using Pt as the diffusion barrier could be applied to the GaAs monolithic microwave integrated circuits switch fabrication with good RF performance and reliability.

KW - Copper metallization

KW - GaAs psedomophic high-electron-mobility transistor (PHEMT)

KW - Platinum

KW - Single-pole-double-throw (SPDT)

KW - Switch

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DO - 10.1109/LMWC.2006.890340

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JO - IEEE Microwave and Wireless Components Letters

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SPDT GaAs switches with copper metallized interconnects

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