Spatially-resolved photoluminescence studies of V-shaped pits on Al 0.16Ga 0.84N

H. Y. Huang; C. S. Ku; W. C. Ke; N. E. Tang; J. M. Peng; Wei-Kuo Chen; W. H. Chen; M. C. Lee; H. Y. Lee

doi:10.1063/1.1637952

Spatially-resolved photoluminescence studies of V-shaped pits on Al _0.16Ga _0.84N

H. Y. Huang^*, C. S. Ku, W. C. Ke, N. E. Tang, J. M. Peng, Wei-Kuo Chen, W. H. Chen, M. C. Lee, H. Y. Lee

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The V-shaped pit on Al-GaN by using the μ-PL and atomic force microscopy (AFM) was examined. The results showed that a specific defect-related band was introduced inside the V-pit region that gives rise to a dominant feature in μ-PL spectra. In addition, the V-pit-related levels were efficient relaxation channels for photoexcited carriers so that the new broader emission peak was enhanced significantly and the I _nbe was suppressed.

Original language	English
Pages (from-to)	2172-2174
Number of pages	3
Journal	Journal of Applied Physics
Volume	95
Issue number	4
DOIs	https://doi.org/10.1063/1.1637952
State	Published - 15 Feb 2004

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title = "Spatially-resolved photoluminescence studies of V-shaped pits on Al 0.16Ga 0.84N",

abstract = "The V-shaped pit on Al-GaN by using the μ-PL and atomic force microscopy (AFM) was examined. The results showed that a specific defect-related band was introduced inside the V-pit region that gives rise to a dominant feature in μ-PL spectra. In addition, the V-pit-related levels were efficient relaxation channels for photoexcited carriers so that the new broader emission peak was enhanced significantly and the I nbe was suppressed.",

author = "Huang, {H. Y.} and Ku, {C. S.} and Ke, {W. C.} and Tang, {N. E.} and Peng, {J. M.} and Wei-Kuo Chen and Chen, {W. H.} and Lee, {M. C.} and Lee, {H. Y.}",

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T1 - Spatially-resolved photoluminescence studies of V-shaped pits on Al 0.16Ga 0.84N

AU - Huang, H. Y.

AU - Ku, C. S.

AU - Ke, W. C.

AU - Tang, N. E.

AU - Peng, J. M.

AU - Chen, Wei-Kuo

AU - Chen, W. H.

AU - Lee, M. C.

AU - Lee, H. Y.

PY - 2004/2/15

Y1 - 2004/2/15

N2 - The V-shaped pit on Al-GaN by using the μ-PL and atomic force microscopy (AFM) was examined. The results showed that a specific defect-related band was introduced inside the V-pit region that gives rise to a dominant feature in μ-PL spectra. In addition, the V-pit-related levels were efficient relaxation channels for photoexcited carriers so that the new broader emission peak was enhanced significantly and the I nbe was suppressed.

AB - The V-shaped pit on Al-GaN by using the μ-PL and atomic force microscopy (AFM) was examined. The results showed that a specific defect-related band was introduced inside the V-pit region that gives rise to a dominant feature in μ-PL spectra. In addition, the V-pit-related levels were efficient relaxation channels for photoexcited carriers so that the new broader emission peak was enhanced significantly and the I nbe was suppressed.

UR - http://www.scopus.com/inward/record.url?scp=1542276626&partnerID=8YFLogxK

U2 - 10.1063/1.1637952

DO - 10.1063/1.1637952

M3 - Article

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SN - 0021-8979

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EP - 2174

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Spatially-resolved photoluminescence studies of V-shaped pits on Al _0.16Ga _0.84N

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