Spatially-resolved EELS and EDS analysis of HfOxNy gate dielectrics deposited by MOCVD using [(C2H5) 2N]4Hf with NO and O2

X. Wu*, M. Couillard, M. S. Lee, J. H. Chen, G. A. Botton, D. Landheer, Z. H. Lu, W. T. Ng, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Fingerprint

Dive into the research topics of 'Spatially-resolved EELS and EDS analysis of HfOxNy gate dielectrics deposited by MOCVD using [(C2H5) 2N]4Hf with NO and O2'. Together they form a unique fingerprint.