Space- and time-resolved mapping of ionic dynamic and electroresistive phenomena in lateral devices

Evgheni Strelcov; Stephen Jesse; Yen Lin Huang; Yung Chun Teng; Ivan I. Kravchenko; Ying Hao Chu; Sergei V. Kalinin

doi:10.1021/nn4017873

Space- and time-resolved mapping of ionic dynamic and electroresistive phenomena in lateral devices

Evgheni Strelcov^*, Stephen Jesse, Yen Lin Huang, Yung Chun Teng, Ivan I. Kravchenko, Ying Hao Chu, Sergei V. Kalinin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

A scanning probe microscopy-based technique for probing local ionic and electronic transport and their dynamic behavior on the 10 ms to 10 s scale is presented. The time-resolved Kelvin probe force microscopy (tr-KPFM) allows mapping of surface potential in both space and time domains, visualizing electronic and ionic charge dynamics and separating underlying processes based on their time responses. Here, tr-KPFM is employed to explore the interplay of the adsorbed surface ions and bulk oxygen vacancies and their role in the resistive switching in a Ca-substituted bismuth ferrite thin film.

Original language	English
Pages (from-to)	6806-6815
Number of pages	10
Journal	ACS Nano
Volume	7
Issue number	8
DOIs	https://doi.org/10.1021/nn4017873
State	Published - 9 Jul 2013

Keywords

Ca-BFO
ionic dynamics
KPFM
oxygen vacancy
surface potential distribution

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10.1021/nn4017873

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title = "Space- and time-resolved mapping of ionic dynamic and electroresistive phenomena in lateral devices",

abstract = "A scanning probe microscopy-based technique for probing local ionic and electronic transport and their dynamic behavior on the 10 ms to 10 s scale is presented. The time-resolved Kelvin probe force microscopy (tr-KPFM) allows mapping of surface potential in both space and time domains, visualizing electronic and ionic charge dynamics and separating underlying processes based on their time responses. Here, tr-KPFM is employed to explore the interplay of the adsorbed surface ions and bulk oxygen vacancies and their role in the resistive switching in a Ca-substituted bismuth ferrite thin film.",

keywords = "Ca-BFO, ionic dynamics, KPFM, oxygen vacancy, surface potential distribution",

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T1 - Space- and time-resolved mapping of ionic dynamic and electroresistive phenomena in lateral devices

AU - Strelcov, Evgheni

AU - Jesse, Stephen

AU - Huang, Yen Lin

AU - Teng, Yung Chun

AU - Kravchenko, Ivan I.

AU - Chu, Ying Hao

AU - Kalinin, Sergei V.

PY - 2013/7/9

Y1 - 2013/7/9

N2 - A scanning probe microscopy-based technique for probing local ionic and electronic transport and their dynamic behavior on the 10 ms to 10 s scale is presented. The time-resolved Kelvin probe force microscopy (tr-KPFM) allows mapping of surface potential in both space and time domains, visualizing electronic and ionic charge dynamics and separating underlying processes based on their time responses. Here, tr-KPFM is employed to explore the interplay of the adsorbed surface ions and bulk oxygen vacancies and their role in the resistive switching in a Ca-substituted bismuth ferrite thin film.

AB - A scanning probe microscopy-based technique for probing local ionic and electronic transport and their dynamic behavior on the 10 ms to 10 s scale is presented. The time-resolved Kelvin probe force microscopy (tr-KPFM) allows mapping of surface potential in both space and time domains, visualizing electronic and ionic charge dynamics and separating underlying processes based on their time responses. Here, tr-KPFM is employed to explore the interplay of the adsorbed surface ions and bulk oxygen vacancies and their role in the resistive switching in a Ca-substituted bismuth ferrite thin film.

KW - Ca-BFO

KW - ionic dynamics

KW - KPFM

KW - oxygen vacancy

KW - surface potential distribution

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JO - ACS Nano

JF - ACS Nano

IS - 8

ER -

Space- and time-resolved mapping of ionic dynamic and electroresistive phenomena in lateral devices

Abstract

Keywords

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