Source/drain doping influence on heterojunction graphene nanoribbon tunneling field effect transistors

Haixia Da*, Kai Tak Lam, Ganesh S. Samudra, Gengchiau Liang, Sai Kong Chin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We investigate the device performance of heterojunction graphene nanoribbons tunneling field-effect transistors as a function of the doping concentrations based on the non-equilibrium Green's function. We observe that variation in source doping changes the OFF-state currents (IOFF), the ON-state currents (ION) and the subthreshold slope (SS) significantly while variation in drain doping changes mainly the I OFF. Additionally, low SS and large ION/IOFF ratio can be achieved by applying proper asymmetric source-drain doping.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
StatePublished - 2011
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 21 Jun 201124 Jun 2011

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Conference

Conference4th IEEE International Nanoelectronics Conference, INEC 2011
Country/TerritoryTaiwan
CityTao-Yuan
Period21/06/1124/06/11

Keywords

  • device performance
  • doping concentration
  • graphene nanoribbon
  • heterojunction
  • tunneling field-effect transistors

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