@inproceedings{fbadbe1a05c74b13bfa5ae5104d030c4,
title = "Source/drain doping influence on heterojunction graphene nanoribbon tunneling field effect transistors",
abstract = "We investigate the device performance of heterojunction graphene nanoribbons tunneling field-effect transistors as a function of the doping concentrations based on the non-equilibrium Green's function. We observe that variation in source doping changes the OFF-state currents (IOFF), the ON-state currents (ION) and the subthreshold slope (SS) significantly while variation in drain doping changes mainly the I OFF. Additionally, low SS and large ION/IOFF ratio can be achieved by applying proper asymmetric source-drain doping.",
keywords = "device performance, doping concentration, graphene nanoribbon, heterojunction, tunneling field-effect transistors",
author = "Haixia Da and Lam, {Kai Tak} and Samudra, {Ganesh S.} and Gengchiau Liang and Chin, {Sai Kong}",
year = "2011",
doi = "10.1109/INEC.2011.5991711",
language = "English",
isbn = "9781457703799",
series = "Proceedings - International NanoElectronics Conference, INEC",
booktitle = "4th IEEE International NanoElectronics Conference, INEC 2011",
note = "4th IEEE International Nanoelectronics Conference, INEC 2011 ; Conference date: 21-06-2011 Through 24-06-2011",
}