SONOS memories with embedded silicon nanocrystals in nitride

Mei-Chun Liu; Tsung Yu Chiang; Po Yi Kuo; Ming Hong Chou; Yi Hong Wu; Hsin Chiang You; Ching Hwa Cheng; Sheng Hsien Liu; Wen Luh Yang; Tan Fu Lei; Tien-Sheng Chao

doi:10.1088/0268-1242/23/7/075033

SONOS memories with embedded silicon nanocrystals in nitride

Mei-Chun Liu^*, Tsung Yu Chiang, Po Yi Kuo, Ming Hong Chou, Yi Hong Wu, Hsin Chiang You, Ching Hwa Cheng, Sheng Hsien Liu, Wen Luh Yang, Tan Fu Lei, Tien-Sheng Chao

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We have successfully demonstrated SONOS memories with embedded Si-NCs in silicon nitride. This new structure exhibits excellent characteristics in terms of larger memory windows and longer retention time compared to control devices. Using the same thickness 2.5 nm of the bottom tunneling oxide, we found that N₂O is better than O₂ oxide. Retention property is improved when the thickness of N₂O is increased to 3.0 nm.

Original language	English
Article number	075033
Journal	Semiconductor Science and Technology
Volume	23
Issue number	7
DOIs	https://doi.org/10.1088/0268-1242/23/7/075033
State	Published - 1 Jul 2008

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title = "SONOS memories with embedded silicon nanocrystals in nitride",

abstract = "We have successfully demonstrated SONOS memories with embedded Si-NCs in silicon nitride. This new structure exhibits excellent characteristics in terms of larger memory windows and longer retention time compared to control devices. Using the same thickness 2.5 nm of the bottom tunneling oxide, we found that N2O is better than O2 oxide. Retention property is improved when the thickness of N2O is increased to 3.0 nm.",

author = "Mei-Chun Liu and Chiang, {Tsung Yu} and Kuo, {Po Yi} and Chou, {Ming Hong} and Wu, {Yi Hong} and You, {Hsin Chiang} and Cheng, {Ching Hwa} and Liu, {Sheng Hsien} and Yang, {Wen Luh} and Lei, {Tan Fu} and Tien-Sheng Chao",

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T1 - SONOS memories with embedded silicon nanocrystals in nitride

AU - Liu, Mei-Chun

AU - Chiang, Tsung Yu

AU - Kuo, Po Yi

AU - Chou, Ming Hong

AU - Wu, Yi Hong

AU - You, Hsin Chiang

AU - Cheng, Ching Hwa

AU - Liu, Sheng Hsien

AU - Yang, Wen Luh

AU - Lei, Tan Fu

AU - Chao, Tien-Sheng

PY - 2008/7/1

Y1 - 2008/7/1

N2 - We have successfully demonstrated SONOS memories with embedded Si-NCs in silicon nitride. This new structure exhibits excellent characteristics in terms of larger memory windows and longer retention time compared to control devices. Using the same thickness 2.5 nm of the bottom tunneling oxide, we found that N2O is better than O2 oxide. Retention property is improved when the thickness of N2O is increased to 3.0 nm.

AB - We have successfully demonstrated SONOS memories with embedded Si-NCs in silicon nitride. This new structure exhibits excellent characteristics in terms of larger memory windows and longer retention time compared to control devices. Using the same thickness 2.5 nm of the bottom tunneling oxide, we found that N2O is better than O2 oxide. Retention property is improved when the thickness of N2O is increased to 3.0 nm.

UR - http://www.scopus.com/inward/record.url?scp=47749110616&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/23/7/075033

DO - 10.1088/0268-1242/23/7/075033

M3 - Article

AN - SCOPUS:47749110616

SN - 0268-1242

VL - 23

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 7

M1 - 075033

ER -

SONOS memories with embedded silicon nanocrystals in nitride

Abstract

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