SONOS memories with embedded silicon nanocrystals in nitride

Mei-Chun Liu*, Tsung Yu Chiang, Po Yi Kuo, Ming Hong Chou, Yi Hong Wu, Hsin Chiang You, Ching Hwa Cheng, Sheng Hsien Liu, Wen Luh Yang, Tan Fu Lei, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


We have successfully demonstrated SONOS memories with embedded Si-NCs in silicon nitride. This new structure exhibits excellent characteristics in terms of larger memory windows and longer retention time compared to control devices. Using the same thickness 2.5 nm of the bottom tunneling oxide, we found that N2O is better than O2 oxide. Retention property is improved when the thickness of N2O is increased to 3.0 nm.

Original languageEnglish
Article number075033
JournalSemiconductor Science and Technology
Issue number7
StatePublished - 1 Jul 2008


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