Solution-processed smooth copper thiocyanate layer with improved hole injection ability for the fabrication of quantum dot light-emitting diodes

Ming Ru Wen; Sheng Hsiung Yang; Wei Sheng Chen

doi:10.3390/nano12010154

Solution-processed smooth copper thiocyanate layer with improved hole injection ability for the fabrication of quantum dot light-emitting diodes

Ming Ru Wen, Sheng Hsiung Yang^*, Wei Sheng Chen

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Copper thiocyanate (CuSCN) has been gradually utilized as the hole injection layer (HIL) within optoelectronic devices, owing to its high transparency in the visible range, moderate hole mobility, and desirable environmental stability. In this research, we demonstrate quantum dot light-emitting diodes (QLEDs) with high brightness and current efficiency by doping 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) in CuSCN as the HIL. The experimental results indicated a smoother surface of CuSCN upon F4TCNQ doping. The augmentation in hole mobility of CuSCN and carrier injection to reach balanced charge transport in QLEDs were confirmed. A maximum brightness of 169,230 cd m⁻² and a current efficiency of 35.1 cd A⁻¹ from the optimized device were received by adding 0.02 wt% of F4TCNQ in CuSCN, revealing promising use in light-emitting applications.

Original language	English
Article number	154
Journal	Nanomaterials
Volume	12
Issue number	1
DOIs	https://doi.org/10.3390/nano12010154
State	Published - 1 Jan 2022

Keywords

Copper thiocyanate
Hole injection layer
Light-emitting diode
Molecular doping
Quantum dot

Access to Document

10.3390/nano12010154

Cite this

@article{d8f4f61bc2f143f9aa199b6f32b832a6,

title = "Solution-processed smooth copper thiocyanate layer with improved hole injection ability for the fabrication of quantum dot light-emitting diodes",

abstract = "Copper thiocyanate (CuSCN) has been gradually utilized as the hole injection layer (HIL) within optoelectronic devices, owing to its high transparency in the visible range, moderate hole mobility, and desirable environmental stability. In this research, we demonstrate quantum dot light-emitting diodes (QLEDs) with high brightness and current efficiency by doping 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) in CuSCN as the HIL. The experimental results indicated a smoother surface of CuSCN upon F4TCNQ doping. The augmentation in hole mobility of CuSCN and carrier injection to reach balanced charge transport in QLEDs were confirmed. A maximum brightness of 169,230 cd m−2 and a current efficiency of 35.1 cd A−1 from the optimized device were received by adding 0.02 wt% of F4TCNQ in CuSCN, revealing promising use in light-emitting applications.",

keywords = "Copper thiocyanate, Hole injection layer, Light-emitting diode, Molecular doping, Quantum dot",

author = "Wen, {Ming Ru} and Yang, {Sheng Hsiung} and Chen, {Wei Sheng}",

note = "Publisher Copyright: {\textcopyright} 2022 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2022",

month = jan,

day = "1",

doi = "10.3390/nano12010154",

language = "English",

volume = "12",

journal = "Nanomaterials",

issn = "2079-4991",

publisher = "Multidisciplinary Digital Publishing Institute",

number = "1",

}

TY - JOUR

T1 - Solution-processed smooth copper thiocyanate layer with improved hole injection ability for the fabrication of quantum dot light-emitting diodes

AU - Wen, Ming Ru

AU - Yang, Sheng Hsiung

AU - Chen, Wei Sheng

PY - 2022/1/1

Y1 - 2022/1/1

N2 - Copper thiocyanate (CuSCN) has been gradually utilized as the hole injection layer (HIL) within optoelectronic devices, owing to its high transparency in the visible range, moderate hole mobility, and desirable environmental stability. In this research, we demonstrate quantum dot light-emitting diodes (QLEDs) with high brightness and current efficiency by doping 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) in CuSCN as the HIL. The experimental results indicated a smoother surface of CuSCN upon F4TCNQ doping. The augmentation in hole mobility of CuSCN and carrier injection to reach balanced charge transport in QLEDs were confirmed. A maximum brightness of 169,230 cd m−2 and a current efficiency of 35.1 cd A−1 from the optimized device were received by adding 0.02 wt% of F4TCNQ in CuSCN, revealing promising use in light-emitting applications.

AB - Copper thiocyanate (CuSCN) has been gradually utilized as the hole injection layer (HIL) within optoelectronic devices, owing to its high transparency in the visible range, moderate hole mobility, and desirable environmental stability. In this research, we demonstrate quantum dot light-emitting diodes (QLEDs) with high brightness and current efficiency by doping 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) in CuSCN as the HIL. The experimental results indicated a smoother surface of CuSCN upon F4TCNQ doping. The augmentation in hole mobility of CuSCN and carrier injection to reach balanced charge transport in QLEDs were confirmed. A maximum brightness of 169,230 cd m−2 and a current efficiency of 35.1 cd A−1 from the optimized device were received by adding 0.02 wt% of F4TCNQ in CuSCN, revealing promising use in light-emitting applications.

KW - Copper thiocyanate

KW - Hole injection layer

KW - Light-emitting diode

KW - Molecular doping

KW - Quantum dot

UR - http://www.scopus.com/inward/record.url?scp=85122032663&partnerID=8YFLogxK

U2 - 10.3390/nano12010154

DO - 10.3390/nano12010154

M3 - Article

AN - SCOPUS:85122032663

SN - 2079-4991

VL - 12

JO - Nanomaterials

JF - Nanomaterials

IS - 1

M1 - 154

ER -

Solution-processed smooth copper thiocyanate layer with improved hole injection ability for the fabrication of quantum dot light-emitting diodes

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this