Solute effect of Cu on interdiffusion in Al3Ti compound films

J. Tardy*, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

98 Scopus citations


We study the interdiffusion and formation of Al3Ti, in bimetallic thin films of Al/Ti and (Al0.25 at. % Cu)/Ti, both with and without W diffusion markers, in the temperature range 350500°C. The growth kinetics of Al3Ti and marker displacement were measured by Rutherford backscattering spectroscopy. Complementary structural and compositional information were obtained by glancing-incidence x-ray diffraction, transmission electron microscopy, Auger-electron spectroscopy, and secondary-ion-mass spectroscopy. The effect of Cu, revealed by marker analysis of the intrinsic diffusivities of Al and Ti in Al3Ti, is to increase the activation energy of Ti diffusion from 1.68 eV to 2.17 eV while the diffusion of Al is much less affected. By examining the crystal structure of Al3Ti, a vacancy mechanism with Cu occupying Al sites is proposed to explain the solute effect.

Original languageEnglish
Pages (from-to)2070-2081
Number of pages12
JournalPhysical Review B
Issue number4
StatePublished - 1 Jan 1985


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