Solid solubility limited dopant activation of group III dopants (B, Ga & In) in Ge targeting sub-7nm node low p+ contact resistance

John Borland, Yao Jen Lee, Shang Shiun Chuang, Tseung-Yuen Tseng, Chee Wee Liu, Karim Huet, Gary Goodman, John Marino

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

Low contact resistance (Rc) is key to boost device performance for sub-10nm node. At VLSI Technology Symposium 2016 Samsung reported they reduced Rc by 10% from 14nm to 10nm bulk FinFET technology [1]. TSMC in their beyond 10nm node FinFET paper reported reducing S/D (source/drain) parasitic resistance and enhanced contact process [2] and at IEDM-2016 reported 7nm FinFET reduced S/D parasitic resistance and developed a novel contact process [3]. A complete session #7 was dedicated to 'Contact Resistance Innovations for Sub 10nm Scaling' with 4 papers at the VLSI Technology Symposium 2016 [4-7]. To achieve Rc in the low E-9 Ωcm2 requires active dopant carrier concentration >5E20/cm3 to low E21/cm3. For SiP n+ S/D contacts P >1E21/cm3 active dopant carrier concentration is realized with laser melt annealing resulting in Rc <1E-9 Ωcm2 [6]. For 70%-SiGe p+ S/D contacts IMEC reported using pre and post Ge amorphous implants to boost the B-implant activation with nsec laser melt annealing to reduce Rc from 1.2E-8 Ωcm2 to 2.1E-9 Ωcm2 [4]. IBM/GF on the other hand reported reducing SiGe p+ S/D Rc from 1.3E-8 Ωcm2 to 1.9E-9 Ωcm2 by using a thin 12nm 100%-Ge trench-epi and switching from a p+ Ge:B to a p+ Ge:B:group-III metastable alloy for surface interface doping [8]. The group-III Me-alloy in Ge boosted p+ dopant activation from ∼1E19/cm3 with B to ∼8E20/cm3 with Ge+Me-alloy. They mentioned no difference between msec non-melt and nsec melt laser annealing.

Original languageEnglish
Title of host publication17th International Workshop on Junction Technology, IWJT 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages94-97
Number of pages4
ISBN (Electronic)9784863486263
DOIs
StatePublished - 30 Jun 2017
Event17th International Workshop on Junction Technology, IWJT 2017 - Kyoto, Japan
Duration: 1 Jun 20172 Jun 2017

Publication series

Name17th International Workshop on Junction Technology, IWJT 2017

Conference

Conference17th International Workshop on Junction Technology, IWJT 2017
Country/TerritoryJapan
CityKyoto
Period1/06/172/06/17

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