TY - JOUR
T1 - Small signal model and RF performance analysis of InAs/GaSb hetero-junction tunneling field effect transistor
AU - Singh, Sankalp Kumar
AU - Kaushik, Pragyey Kumar
AU - Kakkerla, Ramesh Kumar
AU - Gupta, Ankur
AU - Anandan, Deepak
AU - Nagarajan, Venkatesan
AU - Yu, Hung-Wei
AU - Chang, Edward Yi
N1 - Publisher Copyright:
© 2020 IOP Publishing Ltd.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2020/9
Y1 - 2020/9
N2 - This work presents a comprehensive study of small-signal parameters based on radio frequency (RF) data of a heterojunction tunnel field effect transistor (HJ-TFET). The TFET device shows excellent small-signal analog and RF performance. Numerical device simulations of the optimized HJ-TFET shows ION/IOFF ratio of ∼6 orders of magnitude. It is found that gate voltage dependency of HJ-TFET on the intrinsic parameters obtained from the non-quasi static (NQS) model differ from the conventional MOSFET due to band to band tunneling mechanism and inversion layer formation in the device. Based on this mechanism, the high frequency analog and RF performance of HJ-TFET were investigated using TCADand modeled usingNQS model, which was verified upto 100 GHz. The modeling results showed excellent agreement with the simulated small-signal parameters at multiple drain voltages (Vd). f
AB - This work presents a comprehensive study of small-signal parameters based on radio frequency (RF) data of a heterojunction tunnel field effect transistor (HJ-TFET). The TFET device shows excellent small-signal analog and RF performance. Numerical device simulations of the optimized HJ-TFET shows ION/IOFF ratio of ∼6 orders of magnitude. It is found that gate voltage dependency of HJ-TFET on the intrinsic parameters obtained from the non-quasi static (NQS) model differ from the conventional MOSFET due to band to band tunneling mechanism and inversion layer formation in the device. Based on this mechanism, the high frequency analog and RF performance of HJ-TFET were investigated using TCADand modeled usingNQS model, which was verified upto 100 GHz. The modeling results showed excellent agreement with the simulated small-signal parameters at multiple drain voltages (Vd). f
KW - Modeling
KW - Non quasi static (NQS)
KW - Radio-frequency (RF)
KW - Small-signal parameters
KW - Tunneling field-effect transistor (TFET)
UR - http://www.scopus.com/inward/record.url?scp=85092563897&partnerID=8YFLogxK
U2 - 10.1088/2631-8695/aba169
DO - 10.1088/2631-8695/aba169
M3 - Article
AN - SCOPUS:85092563897
SN - 2631-8695
VL - 2
SP - 1
EP - 11
JO - Engineering Research Express
JF - Engineering Research Express
IS - 3
M1 - 035004
ER -