Size tunable Ge quantum dots for near-ultraviolet to near-infrared photosensing with high figures of merit

C. Y. Chien; W. T. Lai; Y. J. Chang; C. C. Wang; M. H. Kuo; Pei-Wen Li

doi:10.1039/c4nr00168k

Size tunable Ge quantum dots for near-ultraviolet to near-infrared photosensing with high figures of merit

C. Y. Chien, W. T. Lai, Y. J. Chang, C. C. Wang, M. H. Kuo, Pei-Wen Li^*

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

We report a unique approach for the inclusion of size-tunable (7-50 nm), spherical Ge quantum dots (QDs) into gate stacks of metal-oxide-semiconductor (MOS) diodes, through selective oxidation of SiGe layers over the buffer layer of Si₃N₄ deposited over the Si substrate. In this complementary MOS (CMOS)-compatible approach, we successfully realized high performance nm scale Ge-QD MOS photodetectors with high figures of merit of low dark current density (1.5 × 10^-3 mA cm^-2), superior photo-current-to-dark current ratio (13 500), high photoresponsivity (2.2 A W^-1), and fast response time (5 ns), which are ready for direct integration with Si CMOS electronic circuits. Most importantly, the detection wavelength of the Ge QDs is tunable from near infrared to near ultraviolet by reducing the QD size from 50 to 7 nm as well as the optimal photoresponsivity is tailored by the Ge QD size and the effective thickness of gate dielectrics. This journal is

Original language	English
Pages (from-to)	5303-5308
Number of pages	6
Journal	Nanoscale
Volume	6
Issue number	10
DOIs	https://doi.org/10.1039/c4nr00168k
State	Published - 21 May 2014

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title = "Size tunable Ge quantum dots for near-ultraviolet to near-infrared photosensing with high figures of merit",

abstract = "We report a unique approach for the inclusion of size-tunable (7-50 nm), spherical Ge quantum dots (QDs) into gate stacks of metal-oxide-semiconductor (MOS) diodes, through selective oxidation of SiGe layers over the buffer layer of Si3N4 deposited over the Si substrate. In this complementary MOS (CMOS)-compatible approach, we successfully realized high performance nm scale Ge-QD MOS photodetectors with high figures of merit of low dark current density (1.5 × 10-3 mA cm-2), superior photo-current-to-dark current ratio (13 500), high photoresponsivity (2.2 A W-1), and fast response time (5 ns), which are ready for direct integration with Si CMOS electronic circuits. Most importantly, the detection wavelength of the Ge QDs is tunable from near infrared to near ultraviolet by reducing the QD size from 50 to 7 nm as well as the optimal photoresponsivity is tailored by the Ge QD size and the effective thickness of gate dielectrics. This journal is",

author = "Chien, {C. Y.} and Lai, {W. T.} and Chang, {Y. J.} and Wang, {C. C.} and Kuo, {M. H.} and Pei-Wen Li",

year = "2014",

month = may,

day = "21",

doi = "10.1039/c4nr00168k",

language = "English",

volume = "6",

pages = "5303--5308",

journal = "Nanoscale",

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publisher = "Royal Society of Chemistry",

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AU - Chien, C. Y.

AU - Lai, W. T.

AU - Chang, Y. J.

AU - Wang, C. C.

AU - Kuo, M. H.

AU - Li, Pei-Wen

PY - 2014/5/21

Y1 - 2014/5/21

N2 - We report a unique approach for the inclusion of size-tunable (7-50 nm), spherical Ge quantum dots (QDs) into gate stacks of metal-oxide-semiconductor (MOS) diodes, through selective oxidation of SiGe layers over the buffer layer of Si3N4 deposited over the Si substrate. In this complementary MOS (CMOS)-compatible approach, we successfully realized high performance nm scale Ge-QD MOS photodetectors with high figures of merit of low dark current density (1.5 × 10-3 mA cm-2), superior photo-current-to-dark current ratio (13 500), high photoresponsivity (2.2 A W-1), and fast response time (5 ns), which are ready for direct integration with Si CMOS electronic circuits. Most importantly, the detection wavelength of the Ge QDs is tunable from near infrared to near ultraviolet by reducing the QD size from 50 to 7 nm as well as the optimal photoresponsivity is tailored by the Ge QD size and the effective thickness of gate dielectrics. This journal is

AB - We report a unique approach for the inclusion of size-tunable (7-50 nm), spherical Ge quantum dots (QDs) into gate stacks of metal-oxide-semiconductor (MOS) diodes, through selective oxidation of SiGe layers over the buffer layer of Si3N4 deposited over the Si substrate. In this complementary MOS (CMOS)-compatible approach, we successfully realized high performance nm scale Ge-QD MOS photodetectors with high figures of merit of low dark current density (1.5 × 10-3 mA cm-2), superior photo-current-to-dark current ratio (13 500), high photoresponsivity (2.2 A W-1), and fast response time (5 ns), which are ready for direct integration with Si CMOS electronic circuits. Most importantly, the detection wavelength of the Ge QDs is tunable from near infrared to near ultraviolet by reducing the QD size from 50 to 7 nm as well as the optimal photoresponsivity is tailored by the Ge QD size and the effective thickness of gate dielectrics. This journal is

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SP - 5303

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JO - Nanoscale

JF - Nanoscale

IS - 10

ER -

Size tunable Ge quantum dots for near-ultraviolet to near-infrared photosensing with high figures of merit

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