Abstract
We have developed a manufacturing-friendly spin-orbit torque magnetic random access memory (SOT-MRAM) technology in CMOS compatible 8-inch fab process. The proposed SOT-MRAM process technology resolves etching non-uniformity and reduction of high resistivity heavy-metal nanowire resistance issues. Besides, we present device size-dependent switching current threshold in the proposed SOT-MRAM cell structure. To realize the potential of our fabricated SOT-MRAM, wafer-level uniformity, cycling and temperature dependence SOT switching have been comprehensively investigated. Furthermore, the thermal stability factor ( ${\Delta }$ ) was calculated from temperature-dependence SOT switching to fulfill the thermal stability criteria, i.e., > 10 years of this emerging SOT-MRAM technology.
Original language | English |
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Article number | 8984374 |
Pages (from-to) | 163-169 |
Number of pages | 7 |
Journal | IEEE Journal of the Electron Devices Society |
Volume | 8 |
DOIs | |
State | Published - 1 Jan 2020 |
Keywords
- magnetic tunnel junction
- spin-hall effect
- spin-orbit torque
- spin-transfer torque
- Spintronics