Size-dependent strain relaxation in InN islands grown on GaN by metalorganic chemical vapor deposition

Wen Che Tsai; Feng Yi Lin; Wen Cheng Ke; Shu Kai Lu; Shun-Jen Cheng; Wu-Ching Chou; Wei-Kuo Chen; Ming Chih Lee; Wen-Hao Chang

doi:10.1063/1.3064166

Size-dependent strain relaxation in InN islands grown on GaN by metalorganic chemical vapor deposition

Wen Che Tsai, Feng Yi Lin, Wen Cheng Ke, Shu Kai Lu, Shun-Jen Cheng, Wu-Ching Chou, Wei-Kuo Chen, Ming Chih Lee, Wen-Hao Chang^*

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We report Raman measurements on InN islands grown on GaN by metalorganic chemical vapor deposition. The Raman frequency of the InN E₂ mode is found to decrease exponentially with the island's aspect ratio, indicating a size dependent strain relaxation during the island formation. Our results suggest that most of the strain at the InN-GaN interface have been released plastically during the initial stage of island formations. After that, the residual strain of only -3.5× 10^-3 is further relaxed elastically via surface islanding. The experimental data are in agreement with the strain relaxation predicted from a simplified model analysis as well as three-dimensional finite-element simulations.

Original language	English
Article number	063102
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	94
Issue number	6
DOIs	https://doi.org/10.1063/1.3064166
State	Published - 9 Feb 2009

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title = "Size-dependent strain relaxation in InN islands grown on GaN by metalorganic chemical vapor deposition",

abstract = "We report Raman measurements on InN islands grown on GaN by metalorganic chemical vapor deposition. The Raman frequency of the InN E2 mode is found to decrease exponentially with the island's aspect ratio, indicating a size dependent strain relaxation during the island formation. Our results suggest that most of the strain at the InN-GaN interface have been released plastically during the initial stage of island formations. After that, the residual strain of only -3.5× 10-3 is further relaxed elastically via surface islanding. The experimental data are in agreement with the strain relaxation predicted from a simplified model analysis as well as three-dimensional finite-element simulations.",

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AU - Tsai, Wen Che

AU - Lin, Feng Yi

AU - Ke, Wen Cheng

AU - Lu, Shu Kai

AU - Cheng, Shun-Jen

AU - Chou, Wu-Ching

AU - Chen, Wei-Kuo

AU - Lee, Ming Chih

AU - Chang, Wen-Hao

PY - 2009/2/9

Y1 - 2009/2/9

N2 - We report Raman measurements on InN islands grown on GaN by metalorganic chemical vapor deposition. The Raman frequency of the InN E2 mode is found to decrease exponentially with the island's aspect ratio, indicating a size dependent strain relaxation during the island formation. Our results suggest that most of the strain at the InN-GaN interface have been released plastically during the initial stage of island formations. After that, the residual strain of only -3.5× 10-3 is further relaxed elastically via surface islanding. The experimental data are in agreement with the strain relaxation predicted from a simplified model analysis as well as three-dimensional finite-element simulations.

AB - We report Raman measurements on InN islands grown on GaN by metalorganic chemical vapor deposition. The Raman frequency of the InN E2 mode is found to decrease exponentially with the island's aspect ratio, indicating a size dependent strain relaxation during the island formation. Our results suggest that most of the strain at the InN-GaN interface have been released plastically during the initial stage of island formations. After that, the residual strain of only -3.5× 10-3 is further relaxed elastically via surface islanding. The experimental data are in agreement with the strain relaxation predicted from a simplified model analysis as well as three-dimensional finite-element simulations.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Size-dependent strain relaxation in InN islands grown on GaN by metalorganic chemical vapor deposition

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