SiOC-Accelerated Graphene Grown on SiO2/Si with Tunable Electronic Properties

Paul D. Garman; Hao Yang; Ying Chieh Yen; Jianfeng Yu; Kwang Joo Kwak; Veysi Malkoc; Vishank V. Talesara; Ly J. Lee; Wu Lu

doi:10.1002/pssr.201900017

SiOC-Accelerated Graphene Grown on SiO₂/Si with Tunable Electronic Properties

Paul D. Garman, Hao Yang, Ying Chieh Yen, Jianfeng Yu, Kwang Joo Kwak, Veysi Malkoc, Vishank V. Talesara, Ly J. Lee^*, Wu Lu

^*Corresponding author for this work

Institute of Biopharmaceutical Sciences

Research output: Contribution to journal › Letter › peer-review

3 Scopus citations

Abstract

A facile method is developed for fast and high-coverage graphene growth on silicon wafers with covalent bonding by using atmospheric pressure chemical vapor deposition (APCVD) with methane as the carbon source and high temperature silicone rubber as the silicon oxycarbide (SiOC) source. The SiOC transition layer can facilitate and accelerate the formation of graphene. The formation of graphene networks with strong covalent bonding provides a combination of unique properties including higher mechanical strength and lower friction coefficient than a silicon wafer, excellent electrical conductivity, and high carrier mobility up to 275 cm² V⁻¹ s⁻¹.

Original language	English
Article number	1900017
Journal	Physica Status Solidi - Rapid Research Letters
Volume	13
Issue number	6
DOIs	https://doi.org/10.1002/pssr.201900017
State	Published - Jun 2019

Keywords

electrical conductivity
graphene
high mobility
mechanical strength
silicon oxycarbide

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10.1002/pssr.201900017

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title = "SiOC-Accelerated Graphene Grown on SiO2/Si with Tunable Electronic Properties",

abstract = "A facile method is developed for fast and high-coverage graphene growth on silicon wafers with covalent bonding by using atmospheric pressure chemical vapor deposition (APCVD) with methane as the carbon source and high temperature silicone rubber as the silicon oxycarbide (SiOC) source. The SiOC transition layer can facilitate and accelerate the formation of graphene. The formation of graphene networks with strong covalent bonding provides a combination of unique properties including higher mechanical strength and lower friction coefficient than a silicon wafer, excellent electrical conductivity, and high carrier mobility up to 275 cm2 V−1 s−1.",

keywords = "electrical conductivity, graphene, high mobility, mechanical strength, silicon oxycarbide",

author = "Garman, {Paul D.} and Hao Yang and Yen, {Ying Chieh} and Jianfeng Yu and Kwak, {Kwang Joo} and Veysi Malkoc and Talesara, {Vishank V.} and Lee, {Ly J.} and Wu Lu",

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year = "2019",

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T1 - SiOC-Accelerated Graphene Grown on SiO2/Si with Tunable Electronic Properties

AU - Garman, Paul D.

AU - Yang, Hao

AU - Yen, Ying Chieh

AU - Yu, Jianfeng

AU - Kwak, Kwang Joo

AU - Malkoc, Veysi

AU - Talesara, Vishank V.

AU - Lee, Ly J.

AU - Lu, Wu

PY - 2019/6

Y1 - 2019/6

N2 - A facile method is developed for fast and high-coverage graphene growth on silicon wafers with covalent bonding by using atmospheric pressure chemical vapor deposition (APCVD) with methane as the carbon source and high temperature silicone rubber as the silicon oxycarbide (SiOC) source. The SiOC transition layer can facilitate and accelerate the formation of graphene. The formation of graphene networks with strong covalent bonding provides a combination of unique properties including higher mechanical strength and lower friction coefficient than a silicon wafer, excellent electrical conductivity, and high carrier mobility up to 275 cm2 V−1 s−1.

AB - A facile method is developed for fast and high-coverage graphene growth on silicon wafers with covalent bonding by using atmospheric pressure chemical vapor deposition (APCVD) with methane as the carbon source and high temperature silicone rubber as the silicon oxycarbide (SiOC) source. The SiOC transition layer can facilitate and accelerate the formation of graphene. The formation of graphene networks with strong covalent bonding provides a combination of unique properties including higher mechanical strength and lower friction coefficient than a silicon wafer, excellent electrical conductivity, and high carrier mobility up to 275 cm2 V−1 s−1.

KW - electrical conductivity

KW - graphene

KW - high mobility

KW - mechanical strength

KW - silicon oxycarbide

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DO - 10.1002/pssr.201900017

M3 - Letter

AN - SCOPUS:85062325364

SN - 1862-6254

VL - 13

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

IS - 6

M1 - 1900017

ER -

SiOC-Accelerated Graphene Grown on SiO₂/Si with Tunable Electronic Properties

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Keywords

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