SiOC-Accelerated Graphene Grown on SiO2/Si with Tunable Electronic Properties

Paul D. Garman, Hao Yang, Ying Chieh Yen, Jianfeng Yu, Kwang Joo Kwak, Veysi Malkoc, Vishank V. Talesara, Ly J. Lee*, Wu Lu

*Corresponding author for this work

Research output: Contribution to journalLetterpeer-review

2 Scopus citations


A facile method is developed for fast and high-coverage graphene growth on silicon wafers with covalent bonding by using atmospheric pressure chemical vapor deposition (APCVD) with methane as the carbon source and high temperature silicone rubber as the silicon oxycarbide (SiOC) source. The SiOC transition layer can facilitate and accelerate the formation of graphene. The formation of graphene networks with strong covalent bonding provides a combination of unique properties including higher mechanical strength and lower friction coefficient than a silicon wafer, excellent electrical conductivity, and high carrier mobility up to 275 cm2 V−1 s−1.

Original languageEnglish
Article number1900017
JournalPhysica Status Solidi - Rapid Research Letters
Issue number6
StatePublished - Jun 2019


  • electrical conductivity
  • graphene
  • high mobility
  • mechanical strength
  • silicon oxycarbide


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