Single Si3N4 layer on dual substrate for pH sensing micro sensor

S. C. Wang, C. S. Lai*, C. E. Lue, C. M. Yang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this study, a novel approach for realization of an inorganic ISFET/REFET system was presented. Single Si3N4 layer was used as the sensing membrane of EIS structure directly on n and p type substrate. The differential pH sensitivity of them is 25.1 mV/pH, and the linearity is higher than 99%. The drift effect for the single Si3N4 EIS structures could be minimized to around 1 mV/h by this differential arrangement. Besides, light and hysteresis effect for both conditions were investigated.

Original languageEnglish
Title of host publicationSAS 2009 - IEEE Sensors Applications Symposium Proceedings
Pages61-64
Number of pages4
DOIs
StatePublished - 2009
EventIEEE Sensors Applications Symposium, SAS 2009 - New Orleans, LA, United States
Duration: 17 Feb 200919 Feb 2009

Publication series

NameSAS 2009 - IEEE Sensors Applications Symposium Proceedings

Conference

ConferenceIEEE Sensors Applications Symposium, SAS 2009
Country/TerritoryUnited States
CityNew Orleans, LA
Period17/02/0919/02/09

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