Single-photon avalanche diodes in 0.18-μm high-voltage CMOS technology

L. D. Huang; J. Y. Wu; J. P. Wang; Chia-Ming Tsai; Y. H. Huang; D. R. Wu; Sheng-Di Lin

doi:10.1364/OE.25.013333

Single-photon avalanche diodes in 0.18-μm high-voltage CMOS technology

L. D. Huang
, J. Y. Wu
, J. P. Wang
, Chia-Ming Tsai
, Y. H. Huang
, D. R. Wu
, Sheng-Di Lin

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

We have designed and fabricated high-performance single-photon avalanche diodes (SPADs) by using 0.18-μm high-voltage CMOS technology. Without any technology customization, the SPADs have low dark-count rate, high photon-detection probability, low afterpulsing probability, and acceptable timing jitter and breakdown voltage. Our design provides a low-cost and high-performance SPAD for various applications.

Original language	English
Pages (from-to)	13333-13339
Number of pages	7
Journal	Optics Express
Volume	25
Issue number	12
DOIs	https://doi.org/10.1364/OE.25.013333
State	Published - 12 Jun 2017

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title = "Single-photon avalanche diodes in 0.18-μm high-voltage CMOS technology",

abstract = "We have designed and fabricated high-performance single-photon avalanche diodes (SPADs) by using 0.18-μm high-voltage CMOS technology. Without any technology customization, the SPADs have low dark-count rate, high photon-detection probability, low afterpulsing probability, and acceptable timing jitter and breakdown voltage. Our design provides a low-cost and high-performance SPAD for various applications.",

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AU - Wang, J. P.

AU - Tsai, Chia-Ming

AU - Huang, Y. H.

AU - Wu, D. R.

AU - Lin, Sheng-Di

PY - 2017/6/12

Y1 - 2017/6/12

N2 - We have designed and fabricated high-performance single-photon avalanche diodes (SPADs) by using 0.18-μm high-voltage CMOS technology. Without any technology customization, the SPADs have low dark-count rate, high photon-detection probability, low afterpulsing probability, and acceptable timing jitter and breakdown voltage. Our design provides a low-cost and high-performance SPAD for various applications.

AB - We have designed and fabricated high-performance single-photon avalanche diodes (SPADs) by using 0.18-μm high-voltage CMOS technology. Without any technology customization, the SPADs have low dark-count rate, high photon-detection probability, low afterpulsing probability, and acceptable timing jitter and breakdown voltage. Our design provides a low-cost and high-performance SPAD for various applications.

UR - https://www.scopus.com/pages/publications/85020801580

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DO - 10.1364/OE.25.013333

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JO - Optics Express

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ER -

Single-photon avalanche diodes in 0.18-μm high-voltage CMOS technology

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