Single-Mode 850-nm VCSELs for 54-Gb/s ON-OFF Keying Transmission Over 1-km Multi-Mode Fiber

Kai Lun Chi, Yi Xuan Shi, Xin Nan Chen, Jyehong Chen, Ying Jay Yang, J. R. Kropp, N. Ledentsov, M. Agustin, N. N. Ledentsov, G. Stepniak, J. P. Turkiewicz, Jin Wei Shi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

By combing Zn-diffusion and oxide-relief apertures with strong detuning (>20 nm) in our demonstrated short-cavity (λ/2) 850-nm vertical-cavity surface-emitting lasers (VCSELs), wide electrical-to-optical bandwidth (29-24 GHz), low-differential resistance (∼ 100Ω), and (quasi) single-mode (SM) with reasonable output power (∼ 1.4 mW) performances can be simultaneously achieved. Error-free ON-OFF keying transmission at 54-Gb/s data rate through 1-km OM4 multi-mode fiber can be achieved by using highly SM device with forward error correction and decision feedback equalization techniques. As compared with the reference device with a larger oxide-relief aperture and a multi-mode performance, the SM device exhibits lower bit-error rate (1 × 10-5 versus 1 × 10-2) at 54 Gb/s. This result indicates that modal dispersion plays more important role in transmission than that of output power does. We benchmark these results to an industrial 50-Gb/s SM VCSEL. It shows a higher bit-error-rate value ∼ 3.5 × 10-3 versus ∼ 1.4 × 10-4 under the same received optical power.

Original languageEnglish
Article number7433955
Pages (from-to)1367-1370
Number of pages4
JournalIEEE Photonics Technology Letters
Volume28
Issue number12
DOIs
StatePublished - 15 Jun 2016

Keywords

  • Semiconductor lasers
  • Vertical cavity surface emitting lasers

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