Single mode 1.3 μm InGaAsN/GaAs quantum well vertical cavity surface emitting lasers grown by molecular beam epitaxy

Keyphrases

• Molecular Beam Epitaxy 100%
• Vertical-cavity Surface-emitting Laser (VCSEL) 100%
• GaAs Quantum Well 100%
• InGaAsN 100%
• Power Output 50%
• Continuous Wave 50%
• Room Temperature 50%
• Phase Separation 50%
• Side-mode Suppression Ratio 50%
• Lasing Wavelength 50%
• Active Regions 50%
• Single-mode Output 50%
• Slope Efficiency 50%
• Initial Slope 50%
• Intra-cavity 50%
• Material Quality 50%
• Low Temperature Growth 50%

Engineering

• Gallium Arsenide 100%
• Quantum Well 100%
• Cavity Surface 100%
• Emitting Laser 100%
• Output Power 50%
• Continuous Wave 50%
• Room Temperature 50%
• Low Growth Temperature 50%
• Lasing Wavelength 50%
• Active Region 50%
• Initial Slope 50%
• Phase Separation 50%
• Material Quality 50%