Single mode 1.3 μm InGaAsN/GaAs quantum well vertical cavity surface emitting lasers grown by molecular beam epitaxy

Ru Shang Hsiao; Jyh Shyang Wang; Kun Feng Lin; Li Wei; Hui Yu Liu; Chiu Yueh Liang; Chih Ming Lai; Alexey R. Kovsh; Nikolay A. Maleev; Jim Y. Chi; Jenn-Fang Chen

doi:10.1143/JJAP.43.L1555

Single mode 1.3 μm InGaAsN/GaAs quantum well vertical cavity surface emitting lasers grown by molecular beam epitaxy

Ru Shang Hsiao^*, Jyh Shyang Wang, Kun Feng Lin, Li Wei, Hui Yu Liu, Chiu Yueh Liang, Chih Ming Lai, Alexey R. Kovsh, Nikolay A. Maleev, Jim Y. Chi, Jenn-Fang Chen

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The growth by molecular-beam-epitaxy of high-quality 1.3 μm InGaAsN/GaAs quantum wells (QW) intra-cavity contacted vertical cavity surface emitting lasers (VCSELs) was demonstrated. Low-temperature growth, which suppresses the phase separation significantly improves material quality in the active region. Room-temperature continuous wave (RT-CW) single mode output power of 0.75 mW with an initial slope efficiency of 0.17 W/A and a side mode suppression ratio of 40 dB at a lasing wavelength of as long as 1304 nm were obtained.

Original language	English
Pages (from-to)	L1555-L1557
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	43
Issue number	12 A
DOIs	https://doi.org/10.1143/JJAP.43.L1555
State	Published - 1 Dec 2004

Keywords

InGaAsN/GaAs quantum wells
Molecular beam epitaxy
Vertical cavity surface emitting lasers

Access to Document

10.1143/JJAP.43.L1555

Cite this

Hsiao, R. S., Wang, J. S., Lin, K. F., Wei, L., Liu, H. Y., Liang, C. Y., Lai, C. M., Kovsh, A. R., Maleev, N. A., Chi, J. Y., & Chen, J.-F. (2004). Single mode 1.3 μm InGaAsN/GaAs quantum well vertical cavity surface emitting lasers grown by molecular beam epitaxy. Japanese Journal of Applied Physics, Part 2: Letters, 43(12 A), L1555-L1557. https://doi.org/10.1143/JJAP.43.L1555

@article{6c8b2aac815343fbbcc17a4642505aac,

title = "Single mode 1.3 μm InGaAsN/GaAs quantum well vertical cavity surface emitting lasers grown by molecular beam epitaxy",

abstract = "The growth by molecular-beam-epitaxy of high-quality 1.3 μm InGaAsN/GaAs quantum wells (QW) intra-cavity contacted vertical cavity surface emitting lasers (VCSELs) was demonstrated. Low-temperature growth, which suppresses the phase separation significantly improves material quality in the active region. Room-temperature continuous wave (RT-CW) single mode output power of 0.75 mW with an initial slope efficiency of 0.17 W/A and a side mode suppression ratio of 40 dB at a lasing wavelength of as long as 1304 nm were obtained.",

keywords = "InGaAsN/GaAs quantum wells, Molecular beam epitaxy, Vertical cavity surface emitting lasers",

author = "Hsiao, {Ru Shang} and Wang, {Jyh Shyang} and Lin, {Kun Feng} and Li Wei and Liu, {Hui Yu} and Liang, {Chiu Yueh} and Lai, {Chih Ming} and Kovsh, {Alexey R.} and Maleev, {Nikolay A.} and Chi, {Jim Y.} and Jenn-Fang Chen",

year = "2004",

month = dec,

day = "1",

doi = "10.1143/JJAP.43.L1555",

language = "English",

volume = "43",

pages = "L1555--L1557",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "12 A",

}

TY - JOUR

T1 - Single mode 1.3 μm InGaAsN/GaAs quantum well vertical cavity surface emitting lasers grown by molecular beam epitaxy

AU - Hsiao, Ru Shang

AU - Wang, Jyh Shyang

AU - Lin, Kun Feng

AU - Wei, Li

AU - Liu, Hui Yu

AU - Liang, Chiu Yueh

AU - Lai, Chih Ming

AU - Kovsh, Alexey R.

AU - Maleev, Nikolay A.

AU - Chi, Jim Y.

AU - Chen, Jenn-Fang

PY - 2004/12/1

Y1 - 2004/12/1

N2 - The growth by molecular-beam-epitaxy of high-quality 1.3 μm InGaAsN/GaAs quantum wells (QW) intra-cavity contacted vertical cavity surface emitting lasers (VCSELs) was demonstrated. Low-temperature growth, which suppresses the phase separation significantly improves material quality in the active region. Room-temperature continuous wave (RT-CW) single mode output power of 0.75 mW with an initial slope efficiency of 0.17 W/A and a side mode suppression ratio of 40 dB at a lasing wavelength of as long as 1304 nm were obtained.

AB - The growth by molecular-beam-epitaxy of high-quality 1.3 μm InGaAsN/GaAs quantum wells (QW) intra-cavity contacted vertical cavity surface emitting lasers (VCSELs) was demonstrated. Low-temperature growth, which suppresses the phase separation significantly improves material quality in the active region. Room-temperature continuous wave (RT-CW) single mode output power of 0.75 mW with an initial slope efficiency of 0.17 W/A and a side mode suppression ratio of 40 dB at a lasing wavelength of as long as 1304 nm were obtained.

KW - InGaAsN/GaAs quantum wells

KW - Molecular beam epitaxy

KW - Vertical cavity surface emitting lasers

UR - http://www.scopus.com/inward/record.url?scp=19944433438&partnerID=8YFLogxK

U2 - 10.1143/JJAP.43.L1555

DO - 10.1143/JJAP.43.L1555

M3 - Article

AN - SCOPUS:19944433438

SN - 0021-4922

VL - 43

SP - L1555-L1557

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 12 A

ER -

Single mode 1.3 μm InGaAsN/GaAs quantum well vertical cavity surface emitting lasers grown by molecular beam epitaxy

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this