Single Ge quantum dot placement along with self-aligned electrodes for effective management of single electron tunneling

I. H. Chen; K. H. Chen; Pei-Wen Li

doi:10.1109/SNW.2012.6243292

Single Ge quantum dot placement along with self-aligned electrodes for effective management of single electron tunneling

I. H. Chen^*, K. H. Chen, Pei-Wen Li

^*Corresponding author for this work

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We demonstrate controlled number and placement of the Ge quantum dot (QD) along with tunnel junction engineering through a self-organized approach for effective management of single electron tunneling. In this approach, a single Ge QD (∼11 nm) self-aligning with nickel-silicide electrodes is realized by thermally oxidizing a SiGe nanorod bridging a 15-nm-wide nanotrench in close proximity to electrodes via a spacer bi-layer of Si ₃N ₄/SiO ₂. The fabricated Ge QD single electron transistor exhibits clear Coulomb staircase and Coulomb diamond behaviors at T = 120-300 K.

Original language	English
Title of host publication	2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012
DOIs	https://doi.org/10.1109/SNW.2012.6243292
State	Published - 2012
Event	2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012 - Honolulu, HI, United States Duration: 10 Jun 2012 → 11 Jun 2012

Publication series

Name	2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012

Conference

Conference	2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012
Country/Territory	United States
City	Honolulu, HI
Period	10/06/12 → 11/06/12

Access to Document

10.1109/SNW.2012.6243292

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@inproceedings{4d6051a837554b7e8b3c58e284d36a5b,

title = "Single Ge quantum dot placement along with self-aligned electrodes for effective management of single electron tunneling",

abstract = "We demonstrate controlled number and placement of the Ge quantum dot (QD) along with tunnel junction engineering through a self-organized approach for effective management of single electron tunneling. In this approach, a single Ge QD (∼11 nm) self-aligning with nickel-silicide electrodes is realized by thermally oxidizing a SiGe nanorod bridging a 15-nm-wide nanotrench in close proximity to electrodes via a spacer bi-layer of Si 3N 4/SiO 2. The fabricated Ge QD single electron transistor exhibits clear Coulomb staircase and Coulomb diamond behaviors at T = 120-300 K.",

author = "Chen, {I. H.} and Chen, {K. H.} and Pei-Wen Li",

year = "2012",

doi = "10.1109/SNW.2012.6243292",

language = "English",

isbn = "9781467309943",

series = "2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012",

booktitle = "2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012",

note = "2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012 ; Conference date: 10-06-2012 Through 11-06-2012",

}

Chen, IH, Chen, KH & Li, P-W 2012, Single Ge quantum dot placement along with self-aligned electrodes for effective management of single electron tunneling. in 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012., 6243292, 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012, 2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012, Honolulu, HI, United States, 10/06/12. https://doi.org/10.1109/SNW.2012.6243292

Single Ge quantum dot placement along with self-aligned electrodes for effective management of single electron tunneling. / Chen, I. H.; Chen, K. H.; Li, Pei-Wen.
2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012. 2012. 6243292 (2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Single Ge quantum dot placement along with self-aligned electrodes for effective management of single electron tunneling

AU - Chen, I. H.

AU - Chen, K. H.

AU - Li, Pei-Wen

PY - 2012

Y1 - 2012

N2 - We demonstrate controlled number and placement of the Ge quantum dot (QD) along with tunnel junction engineering through a self-organized approach for effective management of single electron tunneling. In this approach, a single Ge QD (∼11 nm) self-aligning with nickel-silicide electrodes is realized by thermally oxidizing a SiGe nanorod bridging a 15-nm-wide nanotrench in close proximity to electrodes via a spacer bi-layer of Si 3N 4/SiO 2. The fabricated Ge QD single electron transistor exhibits clear Coulomb staircase and Coulomb diamond behaviors at T = 120-300 K.

AB - We demonstrate controlled number and placement of the Ge quantum dot (QD) along with tunnel junction engineering through a self-organized approach for effective management of single electron tunneling. In this approach, a single Ge QD (∼11 nm) self-aligning with nickel-silicide electrodes is realized by thermally oxidizing a SiGe nanorod bridging a 15-nm-wide nanotrench in close proximity to electrodes via a spacer bi-layer of Si 3N 4/SiO 2. The fabricated Ge QD single electron transistor exhibits clear Coulomb staircase and Coulomb diamond behaviors at T = 120-300 K.

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U2 - 10.1109/SNW.2012.6243292

DO - 10.1109/SNW.2012.6243292

M3 - Conference contribution

AN - SCOPUS:84867210573

SN - 9781467309943

T3 - 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012

BT - 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012

T2 - 2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012

Y2 - 10 June 2012 through 11 June 2012

ER -

Single Ge quantum dot placement along with self-aligned electrodes for effective management of single electron tunneling

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