A single-crystal silicon nanowire was fabricated using scanning probe lithography and KOH wet etching techniques. Single-electron transistors were produced with a mix and match of optical lithography and scanning probe lithography. It was demonstrated that SPL and KOH wet etching systems can accurately generate oxide patterns and can subsequently fabricate single-electron transistors.
|Number of pages
|Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
|Published - 1 Nov 2002