Abstract
A single-crystal silicon nanowire was fabricated using scanning probe lithography and KOH wet etching techniques. Single-electron transistors were produced with a mix and match of optical lithography and scanning probe lithography. It was demonstrated that SPL and KOH wet etching systems can accurately generate oxide patterns and can subsequently fabricate single-electron transistors.
Original language | English |
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Pages (from-to) | 2824-2828 |
Number of pages | 5 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 20 |
Issue number | 6 |
DOIs | |
State | Published - Nov 2002 |