Single crystalline GaN epitaxial layer prepared on nano-patterned Si(001) substrate

C. C. Huang, S. J. Chang, Cheng-Huang Kuo, C. H. Wu, C. H. Ko, Clement H. Wann, Y. C. Cheng, W. J. Lin

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The authors report the growth of GaN epitaxial layers on nano-patterned Si(001) substrates prepared by the standard facilities used in integrated circuit (IC) industry. It was found that we could achieve high-quality single crystalline GaN by using the 50 nm SiO2 recess patterned Si(001) substrate. It was also found that we can reduce the tensile stress in GaN epitaxial layer by about 95 using the nano-patterned Si(001) substrate, as compared to the conventional un-patterned Si(111) substrate.

Original languageEnglish
Pages (from-to)H626-H629
JournalJournal of the Electrochemical Society
Volume158
Issue number6
DOIs
StatePublished - 2011

Fingerprint

Dive into the research topics of 'Single crystalline GaN epitaxial layer prepared on nano-patterned Si(001) substrate'. Together they form a unique fingerprint.

Cite this