Single-Crystal Islands (SCI) for Monolithic 3-D and Back-End-of-Line FinFET Circuits

Yu Wei Liu; Han Wen Hu; Ping Yi Hsieh; Hao Tung Chung; Shu Jui Chang; Jui Han Liu; Po Tsang Huang; Chih Chao Yang; Chang Hong Shen; Jia Min Shieh; Kuan Neng Chen; Chenming Hu

doi:10.1109/TED.2021.3101180

Single-Crystal Islands (SCI) for Monolithic 3-D and Back-End-of-Line FinFET Circuits

Yu Wei Liu^*, Han Wen Hu, Ping Yi Hsieh, Hao Tung Chung, Shu Jui Chang, Jui Han Liu, Po Tsang Huang, Chih Chao Yang, Chang Hong Shen, Jia Min Shieh, Kuan Neng Chen, Chenming Hu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

A single-crystal islands (SCI) technique using low thermal budget pulse laser process is proposed and demonstrated to fabricate single-crystal silicon islands over amorphous dielectric for monolithic 3-D and back-end-of-line (BEOL) FinFET circuits. By laser recrystallizing mask-defined a-Si islands encapsulated with conformal silicon nitride film, designed single-crystal Si islands can be obtained. The single crystallinity of the island are verified with SECCO Etch, high-resolution electron microscopy (HREM), transmission electron microscopy (TEM), and electron backside scattering (EBSD). About 40 nm FinFETs were successfully fabricated in the SCI Si islands and shown to exhibit excellent electrical performance and low variability that are compatible with the FinFETs fabricated on commercial silicon-on-insulator (SOI) wafer.

Original language	English
Pages (from-to)	5257-5262
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	68
Issue number	10
DOIs	https://doi.org/10.1109/TED.2021.3101180
State	Published - Oct 2021

Keywords

Back-end-of-line (BEOL) FinFET circuits
monolithic 3-D
single-crystal islands (SCI)

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10.1109/TED.2021.3101180

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@article{aee48959c1964aa8911c7f962528ebcd,

title = "Single-Crystal Islands (SCI) for Monolithic 3-D and Back-End-of-Line FinFET Circuits",

abstract = "A single-crystal islands (SCI) technique using low thermal budget pulse laser process is proposed and demonstrated to fabricate single-crystal silicon islands over amorphous dielectric for monolithic 3-D and back-end-of-line (BEOL) FinFET circuits. By laser recrystallizing mask-defined a-Si islands encapsulated with conformal silicon nitride film, designed single-crystal Si islands can be obtained. The single crystallinity of the island are verified with SECCO Etch, high-resolution electron microscopy (HREM), transmission electron microscopy (TEM), and electron backside scattering (EBSD). About 40 nm FinFETs were successfully fabricated in the SCI Si islands and shown to exhibit excellent electrical performance and low variability that are compatible with the FinFETs fabricated on commercial silicon-on-insulator (SOI) wafer.",

keywords = "Back-end-of-line (BEOL) FinFET circuits, monolithic 3-D, single-crystal islands (SCI)",

author = "Liu, {Yu Wei} and Hu, {Han Wen} and Hsieh, {Ping Yi} and Chung, {Hao Tung} and Chang, {Shu Jui} and Liu, {Jui Han} and Huang, {Po Tsang} and Yang, {Chih Chao} and Shen, {Chang Hong} and Shieh, {Jia Min} and Chen, {Kuan Neng} and Chenming Hu",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.",

year = "2021",

month = oct,

doi = "10.1109/TED.2021.3101180",

language = "English",

volume = "68",

pages = "5257--5262",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

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TY - JOUR

T1 - Single-Crystal Islands (SCI) for Monolithic 3-D and Back-End-of-Line FinFET Circuits

AU - Liu, Yu Wei

AU - Hu, Han Wen

AU - Hsieh, Ping Yi

AU - Chung, Hao Tung

AU - Chang, Shu Jui

AU - Liu, Jui Han

AU - Huang, Po Tsang

AU - Yang, Chih Chao

AU - Shen, Chang Hong

AU - Shieh, Jia Min

AU - Chen, Kuan Neng

AU - Hu, Chenming

PY - 2021/10

Y1 - 2021/10

N2 - A single-crystal islands (SCI) technique using low thermal budget pulse laser process is proposed and demonstrated to fabricate single-crystal silicon islands over amorphous dielectric for monolithic 3-D and back-end-of-line (BEOL) FinFET circuits. By laser recrystallizing mask-defined a-Si islands encapsulated with conformal silicon nitride film, designed single-crystal Si islands can be obtained. The single crystallinity of the island are verified with SECCO Etch, high-resolution electron microscopy (HREM), transmission electron microscopy (TEM), and electron backside scattering (EBSD). About 40 nm FinFETs were successfully fabricated in the SCI Si islands and shown to exhibit excellent electrical performance and low variability that are compatible with the FinFETs fabricated on commercial silicon-on-insulator (SOI) wafer.

AB - A single-crystal islands (SCI) technique using low thermal budget pulse laser process is proposed and demonstrated to fabricate single-crystal silicon islands over amorphous dielectric for monolithic 3-D and back-end-of-line (BEOL) FinFET circuits. By laser recrystallizing mask-defined a-Si islands encapsulated with conformal silicon nitride film, designed single-crystal Si islands can be obtained. The single crystallinity of the island are verified with SECCO Etch, high-resolution electron microscopy (HREM), transmission electron microscopy (TEM), and electron backside scattering (EBSD). About 40 nm FinFETs were successfully fabricated in the SCI Si islands and shown to exhibit excellent electrical performance and low variability that are compatible with the FinFETs fabricated on commercial silicon-on-insulator (SOI) wafer.

KW - Back-end-of-line (BEOL) FinFET circuits

KW - monolithic 3-D

KW - single-crystal islands (SCI)

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U2 - 10.1109/TED.2021.3101180

DO - 10.1109/TED.2021.3101180

M3 - Article

AN - SCOPUS:85115835248

SN - 0018-9383

VL - 68

SP - 5257

EP - 5262

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

ER -

Single-Crystal Islands (SCI) for Monolithic 3-D and Back-End-of-Line FinFET Circuits

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Keywords

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