Single-Crystal Islands (SCI) for Monolithic 3-D and Back-End-of-Line FinFET Circuits

Yu Wei Liu*, Han Wen Hu, Ping Yi Hsieh, Hao Tung Chung, Shu Jui Chang, Jui Han Liu, Po Tsang Huang, Chih Chao Yang, Chang Hong Shen, Jia Min Shieh, Kuan Neng Chen, Chenming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

A single-crystal islands (SCI) technique using low thermal budget pulse laser process is proposed and demonstrated to fabricate single-crystal silicon islands over amorphous dielectric for monolithic 3-D and back-end-of-line (BEOL) FinFET circuits. By laser recrystallizing mask-defined a-Si islands encapsulated with conformal silicon nitride film, designed single-crystal Si islands can be obtained. The single crystallinity of the island are verified with SECCO Etch, high-resolution electron microscopy (HREM), transmission electron microscopy (TEM), and electron backside scattering (EBSD). About 40 nm FinFETs were successfully fabricated in the SCI Si islands and shown to exhibit excellent electrical performance and low variability that are compatible with the FinFETs fabricated on commercial silicon-on-insulator (SOI) wafer.

Original languageEnglish
Pages (from-to)5257-5262
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume68
Issue number10
DOIs
StatePublished - Oct 2021

Keywords

  • Back-end-of-line (BEOL) FinFET circuits
  • monolithic 3-D
  • single-crystal islands (SCI)

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