Single-Crystal Germanium by Elevated-Laser-Liquid-Phase-Epitaxy (ELLPE) Technique for Monolithic 3D ICs

Hao Tung Chung; Yu Ming Pan; Nein Chih Lin; Zhong Jie Hong; Bo Jheng Shih; Chih Chao Yang; Chang Hong Shen; Po Tsang Huang; Huang Chung Cheng; Kuan Neng Chen; Chenming Hu

doi:10.1109/LED.2023.3275181

Single-Crystal Germanium by Elevated-Laser-Liquid-Phase-Epitaxy (ELLPE) Technique for Monolithic 3D ICs

Hao Tung Chung
, Yu Ming Pan
, Nein Chih Lin
, Zhong Jie Hong
, Bo Jheng Shih
, Chih Chao Yang
, Chang Hong Shen
, Po Tsang Huang
, Huang Chung Cheng
, Kuan Neng Chen^*
, Chenming Hu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

This letter proposes and demonstrates single-crystal Germanium (Ge) growth by elevated-laser-liquid-phase-epitaxy (ELLPE) and the fabrication of Ge Fin field-effect transistors (FinFETs) for the monolithic three-dimensional integrated circuits (monolithic 3D ICs). This technique permitted the fabrication of single-crystalline (100) Ge film and FinFETs without random grain boundaries. In comparison with the poly-Ge FinFETs, the ELLPE Ge FinFETs exhibit superior performance and uniformity. Moreover, the ANSYS simulated maximum temperature of bottom circuits during the ELLPE technique does not exceed 400 °C, therefore allowing monolithic 3D integration of ICs.

Original language	English
Pages (from-to)	1036-1039
Number of pages	4
Journal	Ieee Electron Device Letters
Volume	44
Issue number	7
DOIs	https://doi.org/10.1109/LED.2023.3275181
State	Published - 1 Jul 2023

Keywords

Monolithic 3D
epitaxy
germanium
laser crystallization
low thermal budget
single-crystal

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10.1109/LED.2023.3275181

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@article{95b23a2c9b8f432892b0360111a9e1ba,

title = "Single-Crystal Germanium by Elevated-Laser-Liquid-Phase-Epitaxy (ELLPE) Technique for Monolithic 3D ICs",

abstract = "This letter proposes and demonstrates single-crystal Germanium (Ge) growth by elevated-laser-liquid-phase-epitaxy (ELLPE) and the fabrication of Ge Fin field-effect transistors (FinFETs) for the monolithic three-dimensional integrated circuits (monolithic 3D ICs). This technique permitted the fabrication of single-crystalline (100) Ge film and FinFETs without random grain boundaries. In comparison with the poly-Ge FinFETs, the ELLPE Ge FinFETs exhibit superior performance and uniformity. Moreover, the ANSYS simulated maximum temperature of bottom circuits during the ELLPE technique does not exceed 400 °C, therefore allowing monolithic 3D integration of ICs.",

keywords = "Monolithic 3D, epitaxy, germanium, laser crystallization, low thermal budget, single-crystal",

author = "Chung, \{Hao Tung\} and Pan, \{Yu Ming\} and Lin, \{Nein Chih\} and Hong, \{Zhong Jie\} and Shih, \{Bo Jheng\} and Yang, \{Chih Chao\} and Shen, \{Chang Hong\} and Huang, \{Po Tsang\} and Cheng, \{Huang Chung\} and Chen, \{Kuan Neng\} and Chenming Hu",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2023",

month = jul,

day = "1",

doi = "10.1109/LED.2023.3275181",

language = "English",

volume = "44",

pages = "1036--1039",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - Single-Crystal Germanium by Elevated-Laser-Liquid-Phase-Epitaxy (ELLPE) Technique for Monolithic 3D ICs

AU - Chung, Hao Tung

AU - Pan, Yu Ming

AU - Lin, Nein Chih

AU - Hong, Zhong Jie

AU - Shih, Bo Jheng

AU - Yang, Chih Chao

AU - Shen, Chang Hong

AU - Huang, Po Tsang

AU - Cheng, Huang Chung

AU - Chen, Kuan Neng

AU - Hu, Chenming

PY - 2023/7/1

Y1 - 2023/7/1

N2 - This letter proposes and demonstrates single-crystal Germanium (Ge) growth by elevated-laser-liquid-phase-epitaxy (ELLPE) and the fabrication of Ge Fin field-effect transistors (FinFETs) for the monolithic three-dimensional integrated circuits (monolithic 3D ICs). This technique permitted the fabrication of single-crystalline (100) Ge film and FinFETs without random grain boundaries. In comparison with the poly-Ge FinFETs, the ELLPE Ge FinFETs exhibit superior performance and uniformity. Moreover, the ANSYS simulated maximum temperature of bottom circuits during the ELLPE technique does not exceed 400 °C, therefore allowing monolithic 3D integration of ICs.

AB - This letter proposes and demonstrates single-crystal Germanium (Ge) growth by elevated-laser-liquid-phase-epitaxy (ELLPE) and the fabrication of Ge Fin field-effect transistors (FinFETs) for the monolithic three-dimensional integrated circuits (monolithic 3D ICs). This technique permitted the fabrication of single-crystalline (100) Ge film and FinFETs without random grain boundaries. In comparison with the poly-Ge FinFETs, the ELLPE Ge FinFETs exhibit superior performance and uniformity. Moreover, the ANSYS simulated maximum temperature of bottom circuits during the ELLPE technique does not exceed 400 °C, therefore allowing monolithic 3D integration of ICs.

KW - Monolithic 3D

KW - epitaxy

KW - germanium

KW - laser crystallization

KW - low thermal budget

KW - single-crystal

UR - https://www.scopus.com/pages/publications/85159816331

U2 - 10.1109/LED.2023.3275181

DO - 10.1109/LED.2023.3275181

M3 - Article

AN - SCOPUS:85159816331

SN - 0741-3106

VL - 44

SP - 1036

EP - 1039

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 7

ER -

Single-Crystal Germanium by Elevated-Laser-Liquid-Phase-Epitaxy (ELLPE) Technique for Monolithic 3D ICs

Abstract

Keywords

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