Single-Crystal Germanium by Elevated-Laser-Liquid-Phase-Epitaxy (ELLPE) Technique for Monolithic 3D ICs

Hao Tung Chung; Yu Ming Pan; Nein Chih Lin; Zhong Jie Hong; Bo Jheng Shih; Chih Chao Yang; Chang Hong Shen; Po Tsang Huang; Huang Chung Cheng; Kuan Neng Chen; Chenming Hu

doi:10.1109/LED.2023.3275181

Single-Crystal Germanium by Elevated-Laser-Liquid-Phase-Epitaxy (ELLPE) Technique for Monolithic 3D ICs

Hao Tung Chung, Yu Ming Pan, Nein Chih Lin, Zhong Jie Hong, Bo Jheng Shih, Chih Chao Yang, Chang Hong Shen, Po Tsang Huang, Huang Chung Cheng, Kuan Neng Chen^*, Chenming Hu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

This letter proposes and demonstrates single-crystal Germanium (Ge) growth by elevated-laser-liquid-phase-epitaxy (ELLPE) and the fabrication of Ge Fin field-effect transistors (FinFETs) for the monolithic three-dimensional integrated circuits (monolithic 3D ICs). This technique permitted the fabrication of single-crystalline (100) Ge film and FinFETs without random grain boundaries. In comparison with the poly-Ge FinFETs, the ELLPE Ge FinFETs exhibit superior performance and uniformity. Moreover, the ANSYS simulated maximum temperature of bottom circuits during the ELLPE technique does not exceed 400 °C, therefore allowing monolithic 3D integration of ICs.

Original language	English
Pages (from-to)	1036-1039
Number of pages	4
Journal	Ieee Electron Device Letters
Volume	44
Issue number	7
DOIs	https://doi.org/10.1109/LED.2023.3275181
State	Published - 1 Jul 2023

Keywords

Monolithic 3D
epitaxy
germanium
laser crystallization
low thermal budget
single-crystal

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title = "Single-Crystal Germanium by Elevated-Laser-Liquid-Phase-Epitaxy (ELLPE) Technique for Monolithic 3D ICs",

abstract = "This letter proposes and demonstrates single-crystal Germanium (Ge) growth by elevated-laser-liquid-phase-epitaxy (ELLPE) and the fabrication of Ge Fin field-effect transistors (FinFETs) for the monolithic three-dimensional integrated circuits (monolithic 3D ICs). This technique permitted the fabrication of single-crystalline (100) Ge film and FinFETs without random grain boundaries. In comparison with the poly-Ge FinFETs, the ELLPE Ge FinFETs exhibit superior performance and uniformity. Moreover, the ANSYS simulated maximum temperature of bottom circuits during the ELLPE technique does not exceed 400 °C, therefore allowing monolithic 3D integration of ICs.",

keywords = "Monolithic 3D, epitaxy, germanium, laser crystallization, low thermal budget, single-crystal",

author = "Chung, {Hao Tung} and Pan, {Yu Ming} and Lin, {Nein Chih} and Hong, {Zhong Jie} and Shih, {Bo Jheng} and Yang, {Chih Chao} and Shen, {Chang Hong} and Huang, {Po Tsang} and Cheng, {Huang Chung} and Chen, {Kuan Neng} and Chenming Hu",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2023",

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doi = "10.1109/LED.2023.3275181",

language = "English",

volume = "44",

pages = "1036--1039",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Single-Crystal Germanium by Elevated-Laser-Liquid-Phase-Epitaxy (ELLPE) Technique for Monolithic 3D ICs

AU - Chung, Hao Tung

AU - Pan, Yu Ming

AU - Lin, Nein Chih

AU - Hong, Zhong Jie

AU - Shih, Bo Jheng

AU - Yang, Chih Chao

AU - Shen, Chang Hong

AU - Huang, Po Tsang

AU - Cheng, Huang Chung

AU - Chen, Kuan Neng

AU - Hu, Chenming

PY - 2023/7/1

Y1 - 2023/7/1

N2 - This letter proposes and demonstrates single-crystal Germanium (Ge) growth by elevated-laser-liquid-phase-epitaxy (ELLPE) and the fabrication of Ge Fin field-effect transistors (FinFETs) for the monolithic three-dimensional integrated circuits (monolithic 3D ICs). This technique permitted the fabrication of single-crystalline (100) Ge film and FinFETs without random grain boundaries. In comparison with the poly-Ge FinFETs, the ELLPE Ge FinFETs exhibit superior performance and uniformity. Moreover, the ANSYS simulated maximum temperature of bottom circuits during the ELLPE technique does not exceed 400 °C, therefore allowing monolithic 3D integration of ICs.

AB - This letter proposes and demonstrates single-crystal Germanium (Ge) growth by elevated-laser-liquid-phase-epitaxy (ELLPE) and the fabrication of Ge Fin field-effect transistors (FinFETs) for the monolithic three-dimensional integrated circuits (monolithic 3D ICs). This technique permitted the fabrication of single-crystalline (100) Ge film and FinFETs without random grain boundaries. In comparison with the poly-Ge FinFETs, the ELLPE Ge FinFETs exhibit superior performance and uniformity. Moreover, the ANSYS simulated maximum temperature of bottom circuits during the ELLPE technique does not exceed 400 °C, therefore allowing monolithic 3D integration of ICs.

KW - Monolithic 3D

KW - epitaxy

KW - germanium

KW - laser crystallization

KW - low thermal budget

KW - single-crystal

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U2 - 10.1109/LED.2023.3275181

DO - 10.1109/LED.2023.3275181

M3 - Article

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SN - 0741-3106

VL - 44

SP - 1036

EP - 1039

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 7

ER -

Single-Crystal Germanium by Elevated-Laser-Liquid-Phase-Epitaxy (ELLPE) Technique for Monolithic 3D ICs

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Keywords

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