Single-Crystal Germanium by Elevated-Laser-Liquid-Phase-Epitaxy (ELLPE) Technique for Monolithic 3D ICs

Hao Tung Chung, Yu Ming Pan, Nein Chih Lin, Bo Jheng Shih, Chih Chao Yang, Chang Hong Shen, Po Tsang Huang, Huang Chung Cheng, Kuan Neng Chen, Chenming Hu

Research output: Contribution to journalArticlepeer-review

Abstract

This paper proposes and demonstrates single-crystal Germanium (Ge) growth by elevated-laser-liquid-phase-epitaxy (ELLPE) and the fabrication of Ge Fin field-effect transistors (FinFETs) for the monolithic three-dimensional integrated circuits (monolithic 3D ICs). This technique permitted the fabrication of single-crystalline (100) Ge film and FinFETs without random grain boundaries. In comparison with the poly-Ge FinFETs, the ELLPE Ge FinFETs exhibit superior performance and uniformity. Moreover, the ANSYS simulated maximum temperature of bottom circuits during the ELLPE technique does not exceed 400°C, therefore allowing monolithic 3D integration of ICs.

Original languageEnglish
Pages (from-to)1
Number of pages1
JournalIeee Electron Device Letters
DOIs
StateAccepted/In press - 2023

Keywords

  • Epitaxial growth
  • epitaxy
  • FinFETs
  • Germanium
  • Germanium
  • Grain boundaries
  • Integrated circuits
  • laser crystallization
  • low thermal budget
  • Monolithic 3D
  • Silicon
  • single-crystal
  • Three-dimensional displays

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