Simultaneous Quality Improvement of Tunneling- and Interpoly-Oxides of Nonvolatile Memory Devices by NH3 and N2O Nitridation

Tien-Sheng Chao; Tsung Hsien Chang

doi:10.1109/TED.2003.818819

Simultaneous Quality Improvement of Tunneling- and Interpoly-Oxides of Nonvolatile Memory Devices by NH₃ and N₂O Nitridation

Tien-Sheng Chao^*, Tsung Hsien Chang

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This brief presents a new nitridation process on floating poly-Si gate to improve the quality of both tunneling oxide and interpoly-oxide of nonvolatile memories. Three types of poly-Si for a floating gate have been investigated. We found in-situ doped poly-Si shows the best performance in terms of breakdown field, charge-to-breakdown (Q_BD) and trapping rate. The Q _BD of interpoly-oxide can be reached as high as 35 C/cm². This scheme is very promising for nonvolatile memory devices.

Original language	English
Pages (from-to)	2300-2302
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	50
Issue number	11
DOIs	https://doi.org/10.1109/TED.2003.818819
State	Published - Nov 2003

Keywords

Interpoly-oxide
NH
NO
Nitridation
Nonvolatile-memory
Tunneling oxide

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10.1109/TED.2003.818819

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title = "Simultaneous Quality Improvement of Tunneling- and Interpoly-Oxides of Nonvolatile Memory Devices by NH3 and N2O Nitridation",

abstract = "This brief presents a new nitridation process on floating poly-Si gate to improve the quality of both tunneling oxide and interpoly-oxide of nonvolatile memories. Three types of poly-Si for a floating gate have been investigated. We found in-situ doped poly-Si shows the best performance in terms of breakdown field, charge-to-breakdown (QBD) and trapping rate. The Q BD of interpoly-oxide can be reached as high as 35 C/cm2. This scheme is very promising for nonvolatile memory devices.",

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AU - Chao, Tien-Sheng

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PY - 2003/11

Y1 - 2003/11

N2 - This brief presents a new nitridation process on floating poly-Si gate to improve the quality of both tunneling oxide and interpoly-oxide of nonvolatile memories. Three types of poly-Si for a floating gate have been investigated. We found in-situ doped poly-Si shows the best performance in terms of breakdown field, charge-to-breakdown (QBD) and trapping rate. The Q BD of interpoly-oxide can be reached as high as 35 C/cm2. This scheme is very promising for nonvolatile memory devices.

AB - This brief presents a new nitridation process on floating poly-Si gate to improve the quality of both tunneling oxide and interpoly-oxide of nonvolatile memories. Three types of poly-Si for a floating gate have been investigated. We found in-situ doped poly-Si shows the best performance in terms of breakdown field, charge-to-breakdown (QBD) and trapping rate. The Q BD of interpoly-oxide can be reached as high as 35 C/cm2. This scheme is very promising for nonvolatile memory devices.

KW - Interpoly-oxide

KW - NH

KW - NO

KW - Nitridation

KW - Nonvolatile-memory

KW - Tunneling oxide

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

ER -

Simultaneous Quality Improvement of Tunneling- and Interpoly-Oxides of Nonvolatile Memory Devices by NH₃ and N₂O Nitridation

Abstract

Keywords

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