Simultaneous Quality Improvement of Tunneling- and Interpoly-Oxides of Nonvolatile Memory Devices by NH3 and N2O Nitridation

Tien-Sheng Chao*, Tsung Hsien Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

This brief presents a new nitridation process on floating poly-Si gate to improve the quality of both tunneling oxide and interpoly-oxide of nonvolatile memories. Three types of poly-Si for a floating gate have been investigated. We found in-situ doped poly-Si shows the best performance in terms of breakdown field, charge-to-breakdown (QBD) and trapping rate. The Q BD of interpoly-oxide can be reached as high as 35 C/cm2. This scheme is very promising for nonvolatile memory devices.

Original languageEnglish
Pages (from-to)2300-2302
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume50
Issue number11
DOIs
StatePublished - 1 Nov 2003

Keywords

  • Interpoly-oxide
  • NO
  • NH
  • Nitridation
  • Nonvolatile-memory
  • Tunneling oxide

Fingerprint

Dive into the research topics of 'Simultaneous Quality Improvement of Tunneling- and Interpoly-Oxides of Nonvolatile Memory Devices by NH<sub>3</sub> and N<sub>2</sub>O Nitridation'. Together they form a unique fingerprint.

Cite this