Simultaneous quality improvement of tunneling- and interpoly-oxides of nonvolatile memory devices by NH3 and N2O nitridation

Tien-Sheng Chao; Tsung Hsien Chang

doi:10.1109/VTSA.2003.1252601

Simultaneous quality improvement of tunneling- and interpoly-oxides of nonvolatile memory devices by NH₃ and N₂O nitridation

Tien-Sheng Chao, Tsung Hsien Chang

Department of Electrophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this paper, we found the nitridation on the interpoly-oxide with NH₃ and N₂O processes can simultaneously improve the quality of both tunneling oxide and interpoly-oxide. Three types of poly-Si for floating gate are investigated. We found in-situ doped poly-Si shows the best performance in terms of breakdown fded, charge to breakdown (Q_ED) and trapping rate The Q_BD of interpoly-oxide can be reached as high as 35 C/cm². This scheme is very promising for nonvolatile memory devices.

Original language	English
Title of host publication	VLSI 2003 - 2003 20th International Symposium on VLSI Technology, Systems and Applications, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	255-258
Number of pages	4
ISBN (Electronic)	0780377656
DOIs	https://doi.org/10.1109/VTSA.2003.1252601
State	Published - 1 Jan 2003
Event	20th International Symposium on VLSI Technology, Systems and Applications, VLSI 2003 - Hsinchu, Taiwan Duration: 6 Oct 2003 → 8 Oct 2003

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
Volume	2003-January
ISSN (Print)	1930-8868

Conference

Conference	20th International Symposium on VLSI Technology, Systems and Applications, VLSI 2003
Country/Territory	Taiwan
City	Hsinchu
Period	6/10/03 → 8/10/03

Access to Document

10.1109/VTSA.2003.1252601

Cite this

Chao, T-S., & Chang, T. H. (2003). Simultaneous quality improvement of tunneling- and interpoly-oxides of nonvolatile memory devices by NH₃ and N₂O nitridation. In VLSI 2003 - 2003 20th International Symposium on VLSI Technology, Systems and Applications, Proceedings (pp. 255-258). [1252601] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VTSA.2003.1252601

Chao, Tien-Sheng ; Chang, Tsung Hsien. / Simultaneous quality improvement of tunneling- and interpoly-oxides of nonvolatile memory devices by NH₃ and N₂O nitridation. VLSI 2003 - 2003 20th International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 255-258 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

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title = "Simultaneous quality improvement of tunneling- and interpoly-oxides of nonvolatile memory devices by NH3 and N2O nitridation",

abstract = "In this paper, we found the nitridation on the interpoly-oxide with NH3 and N2O processes can simultaneously improve the quality of both tunneling oxide and interpoly-oxide. Three types of poly-Si for floating gate are investigated. We found in-situ doped poly-Si shows the best performance in terms of breakdown fded, charge to breakdown (QED) and trapping rate The QBD of interpoly-oxide can be reached as high as 35 C/cm2. This scheme is very promising for nonvolatile memory devices.",

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Chao, T-S & Chang, TH 2003, Simultaneous quality improvement of tunneling- and interpoly-oxides of nonvolatile memory devices by NH₃ and N₂O nitridation. in VLSI 2003 - 2003 20th International Symposium on VLSI Technology, Systems and Applications, Proceedings., 1252601, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 255-258, 20th International Symposium on VLSI Technology, Systems and Applications, VLSI 2003, Hsinchu, Taiwan, 6/10/03. https://doi.org/10.1109/VTSA.2003.1252601

Simultaneous quality improvement of tunneling- and interpoly-oxides of nonvolatile memory devices by NH₃ and N₂O nitridation. / Chao, Tien-Sheng; Chang, Tsung Hsien.
VLSI 2003 - 2003 20th International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. p. 255-258 1252601 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - In this paper, we found the nitridation on the interpoly-oxide with NH3 and N2O processes can simultaneously improve the quality of both tunneling oxide and interpoly-oxide. Three types of poly-Si for floating gate are investigated. We found in-situ doped poly-Si shows the best performance in terms of breakdown fded, charge to breakdown (QED) and trapping rate The QBD of interpoly-oxide can be reached as high as 35 C/cm2. This scheme is very promising for nonvolatile memory devices.

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Chao T-S, Chang TH. Simultaneous quality improvement of tunneling- and interpoly-oxides of nonvolatile memory devices by NH₃ and N₂O nitridation. In VLSI 2003 - 2003 20th International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2003. p. 255-258. 1252601. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2003.1252601