Simulations of electric field distributions by the susceptor-coupling effects for 2.45GHz microwave inside microwave chamber

Fu Kuo Hsueh; Chih Chen Chang; Kun Ping Huang; Yao Jen Lee; Wen Fa Wu; Tien-Sheng Chao

doi:10.1109/IPFA.2015.7224422

Simulations of electric field distributions by the susceptor-coupling effects for 2.45GHz microwave inside microwave chamber

Fu Kuo Hsueh, Chih Chen Chang, Kun Ping Huang, Yao Jen Lee, Wen Fa Wu, Tien-Sheng Chao

Department of Electrophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Microwave annealing were able for the applications of dopant activation[1,2] and silicidation[3] of the nano-scaled transistors, However, during conventional fixed-frequency microwave heating, standing wave patterns are formed in the microwave processing chamber resulting in nodes and antinodes over the processing area. This non-uniform energy distribution in turn results in non-uniform heating, commonly observed in the kitchen microwave oven. Coupling effects to improve the uniformity and dopant activation efficiency by fixed-frequency microwave annealing process was investigated[4]. Through the aid of susceptors, the uniformity of Rs and dopant activation efficiency could be improved.

Original language	English
Title of host publication	Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	385-388
Number of pages	4
ISBN (Electronic)	9781479999286, 9781479999286
DOIs	https://doi.org/10.1109/IPFA.2015.7224422
State	Published - 25 Aug 2015
Event	22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 - Hsinchu, Taiwan Duration: 29 Jun 2015 → 2 Jul 2015

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume	2015-August

Conference

Conference	22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
Country/Territory	Taiwan
City	Hsinchu
Period	29/06/15 → 2/07/15

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10.1109/IPFA.2015.7224422

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Hsueh, F. K., Chang, C. C., Huang, K. P., Lee, Y. J., Wu, W. F., & Chao, T.-S. (2015). Simulations of electric field distributions by the susceptor-coupling effects for 2.45GHz microwave inside microwave chamber. In Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 (pp. 385-388). Article 7224422 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2015.7224422

Hsueh, Fu Kuo ; Chang, Chih Chen ; Huang, Kun Ping et al. / Simulations of electric field distributions by the susceptor-coupling effects for 2.45GHz microwave inside microwave chamber. Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 385-388 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

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title = "Simulations of electric field distributions by the susceptor-coupling effects for 2.45GHz microwave inside microwave chamber",

abstract = "Microwave annealing were able for the applications of dopant activation[1,2] and silicidation[3] of the nano-scaled transistors, However, during conventional fixed-frequency microwave heating, standing wave patterns are formed in the microwave processing chamber resulting in nodes and antinodes over the processing area. This non-uniform energy distribution in turn results in non-uniform heating, commonly observed in the kitchen microwave oven. Coupling effects to improve the uniformity and dopant activation efficiency by fixed-frequency microwave annealing process was investigated[4]. Through the aid of susceptors, the uniformity of Rs and dopant activation efficiency could be improved.",

author = "Hsueh, {Fu Kuo} and Chang, {Chih Chen} and Huang, {Kun Ping} and Lee, {Yao Jen} and Wu, {Wen Fa} and Tien-Sheng Chao",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 ; Conference date: 29-06-2015 Through 02-07-2015",

year = "2015",

month = aug,

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doi = "10.1109/IPFA.2015.7224422",

language = "English",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Hsueh, FK, Chang, CC, Huang, KP, Lee, YJ, Wu, WF & Chao, T-S 2015, Simulations of electric field distributions by the susceptor-coupling effects for 2.45GHz microwave inside microwave chamber. in Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015., 7224422, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., pp. 385-388, 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015, Hsinchu, Taiwan, 29/06/15. https://doi.org/10.1109/IPFA.2015.7224422

Simulations of electric field distributions by the susceptor-coupling effects for 2.45GHz microwave inside microwave chamber. / Hsueh, Fu Kuo; Chang, Chih Chen; Huang, Kun Ping et al.
Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 385-388 7224422 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Hsueh, Fu Kuo

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AU - Wu, Wen Fa

AU - Chao, Tien-Sheng

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N2 - Microwave annealing were able for the applications of dopant activation[1,2] and silicidation[3] of the nano-scaled transistors, However, during conventional fixed-frequency microwave heating, standing wave patterns are formed in the microwave processing chamber resulting in nodes and antinodes over the processing area. This non-uniform energy distribution in turn results in non-uniform heating, commonly observed in the kitchen microwave oven. Coupling effects to improve the uniformity and dopant activation efficiency by fixed-frequency microwave annealing process was investigated[4]. Through the aid of susceptors, the uniformity of Rs and dopant activation efficiency could be improved.

AB - Microwave annealing were able for the applications of dopant activation[1,2] and silicidation[3] of the nano-scaled transistors, However, during conventional fixed-frequency microwave heating, standing wave patterns are formed in the microwave processing chamber resulting in nodes and antinodes over the processing area. This non-uniform energy distribution in turn results in non-uniform heating, commonly observed in the kitchen microwave oven. Coupling effects to improve the uniformity and dopant activation efficiency by fixed-frequency microwave annealing process was investigated[4]. Through the aid of susceptors, the uniformity of Rs and dopant activation efficiency could be improved.

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Hsueh FK, Chang CC, Huang KP, Lee YJ, Wu WF, Chao TS. Simulations of electric field distributions by the susceptor-coupling effects for 2.45GHz microwave inside microwave chamber. In Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 385-388. 7224422. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2015.7224422

Simulations of electric field distributions by the susceptor-coupling effects for 2.45GHz microwave inside microwave chamber

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