Simulation Study of 4H-SiC Trench MOSFETs with Various Gate Structures

Jheng Yi Jiang; Chih Fang Huang; Tian Li Wu; Feng Zhao

doi:10.1109/EDTM.2019.8731332

Simulation Study of 4H-SiC Trench MOSFETs with Various Gate Structures

Jheng Yi Jiang, Chih Fang Huang, Tian Li Wu, Feng Zhao

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Scopus citations

Abstract

In this paper, we systematically study the effect of gate structures of a 4H-SiC UMOSFET on its performance, focusing on the fast switching performance. Based on the simulation results, DC and AC characteristics of different gate structures are compared. It is found that a structure of UMOSFET, combining a grounded split-gate (SG), a trench bottom protection P+ shielding layer (PS) and a current spreading layer (CSL), yields the best compromise.

Original language	English
Title of host publication	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	401-403
Number of pages	3
ISBN (Electronic)	9781538665084
DOIs	https://doi.org/10.1109/EDTM.2019.8731332
State	Published - Mar 2019
Event	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore Duration: 12 Mar 2019 → 15 Mar 2019

Publication series

Name	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Country/Territory	Singapore
City	Singapore
Period	12/03/19 → 15/03/19

Keywords

Ciss
Coss
Crss
Qg
SiC UMOSFETs
split-gate

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10.1109/EDTM.2019.8731332

Cite this

Jiang, J. Y., Huang, C. F., Wu, T. L., & Zhao, F. (2019). Simulation Study of 4H-SiC Trench MOSFETs with Various Gate Structures. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 401-403). Article 8731332 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731332

@inproceedings{854ade070658406a8f0773f073237075,

title = "Simulation Study of 4H-SiC Trench MOSFETs with Various Gate Structures",

abstract = "In this paper, we systematically study the effect of gate structures of a 4H-SiC UMOSFET on its performance, focusing on the fast switching performance. Based on the simulation results, DC and AC characteristics of different gate structures are compared. It is found that a structure of UMOSFET, combining a grounded split-gate (SG), a trench bottom protection P+ shielding layer (PS) and a current spreading layer (CSL), yields the best compromise.",

keywords = "Ciss, Coss, Crss, Qg, SiC UMOSFETs, split-gate",

author = "Jiang, {Jheng Yi} and Huang, {Chih Fang} and Wu, {Tian Li} and Feng Zhao",

year = "2019",

month = mar,

doi = "10.1109/EDTM.2019.8731332",

language = "English",

series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "401--403",

booktitle = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",

address = "美國",

note = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 ; Conference date: 12-03-2019 Through 15-03-2019",

}

Jiang, JY, Huang, CF, Wu, TL & Zhao, F 2019, Simulation Study of 4H-SiC Trench MOSFETs with Various Gate Structures. in 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019., 8731332, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Institute of Electrical and Electronics Engineers Inc., pp. 401-403, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Singapore, Singapore, 12/03/19. https://doi.org/10.1109/EDTM.2019.8731332

Simulation Study of 4H-SiC Trench MOSFETs with Various Gate Structures. / Jiang, Jheng Yi; Huang, Chih Fang; Wu, Tian Li et al.
2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 401-403 8731332 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Jiang, Jheng Yi

AU - Huang, Chih Fang

AU - Wu, Tian Li

AU - Zhao, Feng

PY - 2019/3

Y1 - 2019/3

N2 - In this paper, we systematically study the effect of gate structures of a 4H-SiC UMOSFET on its performance, focusing on the fast switching performance. Based on the simulation results, DC and AC characteristics of different gate structures are compared. It is found that a structure of UMOSFET, combining a grounded split-gate (SG), a trench bottom protection P+ shielding layer (PS) and a current spreading layer (CSL), yields the best compromise.

AB - In this paper, we systematically study the effect of gate structures of a 4H-SiC UMOSFET on its performance, focusing on the fast switching performance. Based on the simulation results, DC and AC characteristics of different gate structures are compared. It is found that a structure of UMOSFET, combining a grounded split-gate (SG), a trench bottom protection P+ shielding layer (PS) and a current spreading layer (CSL), yields the best compromise.

KW - Ciss

KW - Coss

KW - Crss

KW - Qg

KW - SiC UMOSFETs

KW - split-gate

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U2 - 10.1109/EDTM.2019.8731332

DO - 10.1109/EDTM.2019.8731332

M3 - Conference contribution

AN - SCOPUS:85067800483

T3 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

SP - 401

EP - 403

BT - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Y2 - 12 March 2019 through 15 March 2019

ER -

Jiang JY, Huang CF, Wu TL, Zhao F. Simulation Study of 4H-SiC Trench MOSFETs with Various Gate Structures. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 401-403. 8731332. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). doi: 10.1109/EDTM.2019.8731332

Simulation Study of 4H-SiC Trench MOSFETs with Various Gate Structures

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