TY - GEN
T1 - Simulation of the nanoscale interconnects within a spin-resolved electron transport model
AU - Useinov, A.
AU - Lin, H. H.
AU - Useinov, N.
AU - Tagirov, L.
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/8
Y1 - 2020/8
N2 - The work represents the theoretical modeling of the electrical conductance in the nanoscale interconnects within approach of the extended point-like contact (PC) model. The approach describes a diffusive, quasi-ballistic, ballistic and quantum regimes of the spinresolved conductance, that is important for the development of the heterojunction models, including 2D -3D interconnects. As a benefit, the model provides a unified description of the contact resistance from Maxwell diffusive through the ballistic to a purely quantum transport regimes without residual terms. The model of the PC assumes that the contact area can be replaced by a complex quantum device, e.g. single tunnel junction, narrow magnetic domain wall (DW), vacuum gap between tip and surface, source to drain transistor's channel, etc. The potential energy landscape of the device determines its electrical properties.
AB - The work represents the theoretical modeling of the electrical conductance in the nanoscale interconnects within approach of the extended point-like contact (PC) model. The approach describes a diffusive, quasi-ballistic, ballistic and quantum regimes of the spinresolved conductance, that is important for the development of the heterojunction models, including 2D -3D interconnects. As a benefit, the model provides a unified description of the contact resistance from Maxwell diffusive through the ballistic to a purely quantum transport regimes without residual terms. The model of the PC assumes that the contact area can be replaced by a complex quantum device, e.g. single tunnel junction, narrow magnetic domain wall (DW), vacuum gap between tip and surface, source to drain transistor's channel, etc. The potential energy landscape of the device determines its electrical properties.
UR - http://www.scopus.com/inward/record.url?scp=85093670337&partnerID=8YFLogxK
U2 - 10.1109/VLSI-TSA48913.2020.9203729
DO - 10.1109/VLSI-TSA48913.2020.9203729
M3 - Conference contribution
AN - SCOPUS:85093670337
T3 - 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
SP - 72
EP - 73
BT - 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
Y2 - 10 August 2020 through 13 August 2020
ER -