Abstract
We establish a simulation based on a negative voltage read in a resistive random access memory (RRAM)-based neuromorphic circuit to investigate read-disturb-induced inference accuracy degradation. We characterize read-disturb behaviors in hafnium oxide RRAM cells at various read voltages and conductance levels. An analytical multi-conductance level read-disturb model is employed to describe a conductance change of an RRAM cell after repeated inference events. We simulate the read-disturb-induced inference degradation in image recognition of handwritten digits based on the Modified National Institute of Standards and Technology dataset. The impact of a read voltage and an RRAM conductance range for weight mapping on the inference accuracy degradation is evaluated.
Original language | English |
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Pages (from-to) | 596-600 |
Number of pages | 5 |
Journal | Journal of Computational Electronics |
Volume | 22 |
Issue number | 1 |
DOIs | |
State | Published - Feb 2023 |
Keywords
- Inference degradation
- Neuromorphic circuit
- RRAM
- Read-disturb