Simulation of read-disturb-induced inference accuracy degradation in an RRAM-based neuromorphic circuit

Cheng Min Jiang, Chen An Hsu, Tahui Wang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We establish a simulation based on a negative voltage read in a resistive random access memory (RRAM)-based neuromorphic circuit to investigate read-disturb-induced inference accuracy degradation. We characterize read-disturb behaviors in hafnium oxide RRAM cells at various read voltages and conductance levels. An analytical multi-conductance level read-disturb model is employed to describe a conductance change of an RRAM cell after repeated inference events. We simulate the read-disturb-induced inference degradation in image recognition of handwritten digits based on the Modified National Institute of Standards and Technology dataset. The impact of a read voltage and an RRAM conductance range for weight mapping on the inference accuracy degradation is evaluated.

Original languageEnglish
Pages (from-to)596-600
Number of pages5
JournalJournal of Computational Electronics
Volume22
Issue number1
DOIs
StatePublished - Feb 2023

Keywords

  • Inference degradation
  • Neuromorphic circuit
  • RRAM
  • Read-disturb

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