Simulation of MOSFET Lifetime under AC Hot-Electron Stress

Mary M. Kuo; Peter M. Lee; Ping K. Ko; Chen-Ming Hu; Koichi Seki; Jeong Yeol Choi

doi:10.1109/16.3358

Simulation of MOSFET Lifetime under AC Hot-Electron Stress

Mary M. Kuo^*, Peter M. Lee, Ping K. Ko, Chen-Ming Hu, Koichi Seki, Jeong Yeol Choi

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

60 Scopus citations

Abstract

A substrate current model and a quasi-static hot-electron-induced MOSFET degradation model have been implemented in the Substrate Current And Lifetime Evaluator (SCALE). It is shown that quasi-static simulation is valid for a class of waveforms including those encountered in inverter-based logic circuits. The validity and limitations of the model are illustrated with experimental results. SCALE is linked to SPICE externally in a pre- and post-processors fashion to form an independent simulator. The pre-processor interprets the input deck and requests SPICE to output the transient node voltages of the user-selected devices. The post-processor then calculates the transient substrate current and makes a lifetime prediction.

Original language	English
Pages (from-to)	1004-1011
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	35
Issue number	7
DOIs	https://doi.org/10.1109/16.3358
State	Published - 1 Jan 1988

Access to Document

10.1109/16.3358

Cite this

@article{258a8e03366848199c0f94f830abe60e,

title = "Simulation of MOSFET Lifetime under AC Hot-Electron Stress",

abstract = "A substrate current model and a quasi-static hot-electron-induced MOSFET degradation model have been implemented in the Substrate Current And Lifetime Evaluator (SCALE). It is shown that quasi-static simulation is valid for a class of waveforms including those encountered in inverter-based logic circuits. The validity and limitations of the model are illustrated with experimental results. SCALE is linked to SPICE externally in a pre- and post-processors fashion to form an independent simulator. The pre-processor interprets the input deck and requests SPICE to output the transient node voltages of the user-selected devices. The post-processor then calculates the transient substrate current and makes a lifetime prediction.",

author = "Kuo, {Mary M.} and Lee, {Peter M.} and Ko, {Ping K.} and Chen-Ming Hu and Koichi Seki and Choi, {Jeong Yeol}",

year = "1988",

month = jan,

day = "1",

doi = "10.1109/16.3358",

language = "English",

volume = "35",

pages = "1004--1011",

journal = "Ieee Transactions On Electron Devices",

issn = "0018-9383",

publisher = "IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC",

number = "7",

}

TY - JOUR

T1 - Simulation of MOSFET Lifetime under AC Hot-Electron Stress

AU - Kuo, Mary M.

AU - Lee, Peter M.

AU - Ko, Ping K.

AU - Hu, Chen-Ming

AU - Seki, Koichi

AU - Choi, Jeong Yeol

PY - 1988/1/1

Y1 - 1988/1/1

N2 - A substrate current model and a quasi-static hot-electron-induced MOSFET degradation model have been implemented in the Substrate Current And Lifetime Evaluator (SCALE). It is shown that quasi-static simulation is valid for a class of waveforms including those encountered in inverter-based logic circuits. The validity and limitations of the model are illustrated with experimental results. SCALE is linked to SPICE externally in a pre- and post-processors fashion to form an independent simulator. The pre-processor interprets the input deck and requests SPICE to output the transient node voltages of the user-selected devices. The post-processor then calculates the transient substrate current and makes a lifetime prediction.

AB - A substrate current model and a quasi-static hot-electron-induced MOSFET degradation model have been implemented in the Substrate Current And Lifetime Evaluator (SCALE). It is shown that quasi-static simulation is valid for a class of waveforms including those encountered in inverter-based logic circuits. The validity and limitations of the model are illustrated with experimental results. SCALE is linked to SPICE externally in a pre- and post-processors fashion to form an independent simulator. The pre-processor interprets the input deck and requests SPICE to output the transient node voltages of the user-selected devices. The post-processor then calculates the transient substrate current and makes a lifetime prediction.

UR - http://www.scopus.com/inward/record.url?scp=0024053311&partnerID=8YFLogxK

U2 - 10.1109/16.3358

DO - 10.1109/16.3358

M3 - Article

AN - SCOPUS:0024053311

VL - 35

SP - 1004

EP - 1011

JO - Ieee Transactions On Electron Devices

JF - Ieee Transactions On Electron Devices

SN - 0018-9383

IS - 7

ER -

Simulation of MOSFET Lifetime under AC Hot-Electron Stress

Abstract

Access to Document

Other files and links

Fingerprint

Cite this