Simulation of MOSFET Lifetime under AC Hot-Electron Stress

Mary M. Kuo*, Peter M. Lee, Ping K. Ko, Chen-Ming Hu, Koichi Seki, Jeong Yeol Choi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

60 Scopus citations

Abstract

A substrate current model and a quasi-static hot-electron-induced MOSFET degradation model have been implemented in the Substrate Current And Lifetime Evaluator (SCALE). It is shown that quasi-static simulation is valid for a class of waveforms including those encountered in inverter-based logic circuits. The validity and limitations of the model are illustrated with experimental results. SCALE is linked to SPICE externally in a pre- and post-processors fashion to form an independent simulator. The pre-processor interprets the input deck and requests SPICE to output the transient node voltages of the user-selected devices. The post-processor then calculates the transient substrate current and makes a lifetime prediction.

Original languageEnglish
Pages (from-to)1004-1011
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume35
Issue number7
DOIs
StatePublished - 1 Jan 1988

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