Simulation of Grading Double Hetero-junction non-polar InGaN Solar cell

Hsun Wen Wang; Peichen Yu; Hau Vei Han; Chien-Chung Lin; Hao-Chung Kuo; Shiuan-Huei Lin

doi:10.1109/INEC.2013.6465979

Simulation of Grading Double Hetero-junction non-polar InGaN Solar cell

Hsun Wen Wang, Peichen Yu, Hau Vei Han, Chien-Chung Lin, Hao-Chung Kuo^*, Shiuan-Huei Lin

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this study, the characteristics of non-polar double heterojunction GaN/ InxGa1-xN solar cells with various indium contents are numerically investigated under AM 1.5 global spectrum using finite element analysis. By smoothing the interface band edge offset with graded junction, we see the enhancement on short circuit current and power conversion efficiency. The maximum efficiency of the simulation results reached 24,32 % when the major absorption region contains 65% of indium composition.

Original language	English
Title of host publication	Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference (INEC)
Pages	143-145
Number of pages	3
DOIs	https://doi.org/10.1109/INEC.2013.6465979
State	Published - 2 Jan 2013
Event	2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 - Singapore, Singapore Duration: 2 Jan 2013 → 4 Jan 2013

Publication series

Name	International Nanoelectronics Conference
ISSN (Print)	2159-3523

Conference

Conference	2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Country/Territory	Singapore
City	Singapore
Period	2/01/13 → 4/01/13

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10.1109/INEC.2013.6465979

Cite this

@inproceedings{b0d7ce4602f84cbea01f1c608df240d8,

title = "Simulation of Grading Double Hetero-junction non-polar InGaN Solar cell",

abstract = "In this study, the characteristics of non-polar double heterojunction GaN/ InxGa1-xN solar cells with various indium contents are numerically investigated under AM 1.5 global spectrum using finite element analysis. By smoothing the interface band edge offset with graded junction, we see the enhancement on short circuit current and power conversion efficiency. The maximum efficiency of the simulation results reached 24,32 % when the major absorption region contains 65% of indium composition.",

author = "Wang, {Hsun Wen} and Peichen Yu and Han, {Hau Vei} and Chien-Chung Lin and Hao-Chung Kuo and Shiuan-Huei Lin",

year = "2013",

month = jan,

day = "2",

doi = "10.1109/INEC.2013.6465979",

language = "English",

isbn = "978-1-4673-4841-6",

series = "International Nanoelectronics Conference",

pages = "143--145",

booktitle = "Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference (INEC)",

note = "2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 ; Conference date: 02-01-2013 Through 04-01-2013",

}

Wang, HW, Yu, P, Han, HV, Lin, C-C, Kuo, H-C & Lin, S-H 2013, Simulation of Grading Double Hetero-junction non-polar InGaN Solar cell. in Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference (INEC)., 6465979, International Nanoelectronics Conference, pp. 143-145, 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013, Singapore, Singapore, 2/01/13. https://doi.org/10.1109/INEC.2013.6465979

Simulation of Grading Double Hetero-junction non-polar InGaN Solar cell. / Wang, Hsun Wen; Yu, Peichen; Han, Hau Vei et al.
Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference (INEC). 2013. p. 143-145 6465979 (International Nanoelectronics Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Yu, Peichen

AU - Han, Hau Vei

AU - Lin, Chien-Chung

AU - Kuo, Hao-Chung

AU - Lin, Shiuan-Huei

PY - 2013/1/2

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AB - In this study, the characteristics of non-polar double heterojunction GaN/ InxGa1-xN solar cells with various indium contents are numerically investigated under AM 1.5 global spectrum using finite element analysis. By smoothing the interface band edge offset with graded junction, we see the enhancement on short circuit current and power conversion efficiency. The maximum efficiency of the simulation results reached 24,32 % when the major absorption region contains 65% of indium composition.

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DO - 10.1109/INEC.2013.6465979

M3 - Conference contribution

AN - SCOPUS:84874788974

SN - 978-1-4673-4841-6

SN - 978-1-4673-4840-9

T3 - International Nanoelectronics Conference

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BT - Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference (INEC)

T2 - 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013

Y2 - 2 January 2013 through 4 January 2013

ER -

Simulation of Grading Double Hetero-junction non-polar InGaN Solar cell

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