Soft recovery of fast-switching p-i-n rectifiers is studied using experimental data and a novel coupled device and circuit simulator. An analytical model for determining lifetimes is presented and verified by numerical simulations. The softness factor is difficult to model analytically; hence simulations are necessary. Coupled device and circuit simulations also allow a determination of the magnitude of the inductive voltage spike that appears across the rectifier during an unclamped reverse recovery.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 1988|
|Event||Technical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA|
Duration: 11 Dec 1988 → 14 Dec 1988