Simulation and modeling for soft recovery of p-i-n rectifiers

Kartikeya Mayaram; Ben Tien; Chen-Ming Hu; Donald O. Pederson

doi:10.1109/IEDM.1988.32891

Simulation and modeling for soft recovery of p-i-n rectifiers

Kartikeya Mayaram^*, Ben Tien, Chen-Ming Hu, Donald O. Pederson

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

10 Scopus citations

Abstract

Soft recovery of fast-switching p-i-n rectifiers is studied using experimental data and a novel coupled device and circuit simulator. An analytical model for determining lifetimes is presented and verified by numerical simulations. The softness factor is difficult to model analytically; hence simulations are necessary. Coupled device and circuit simulations also allow a determination of the magnitude of the inductive voltage spike that appears across the rectifier during an unclamped reverse recovery.

Original language	English
Pages (from-to)	622-625
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1988.32891
State	Published - 1 Dec 1988
Event	Technical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA Duration: 11 Dec 1988 → 14 Dec 1988

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10.1109/IEDM.1988.32891

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title = "Simulation and modeling for soft recovery of p-i-n rectifiers",

abstract = "Soft recovery of fast-switching p-i-n rectifiers is studied using experimental data and a novel coupled device and circuit simulator. An analytical model for determining lifetimes is presented and verified by numerical simulations. The softness factor is difficult to model analytically; hence simulations are necessary. Coupled device and circuit simulations also allow a determination of the magnitude of the inductive voltage spike that appears across the rectifier during an unclamped reverse recovery.",

author = "Kartikeya Mayaram and Ben Tien and Chen-Ming Hu and Pederson, {Donald O.}",

year = "1988",

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T1 - Simulation and modeling for soft recovery of p-i-n rectifiers

AU - Mayaram, Kartikeya

AU - Tien, Ben

AU - Hu, Chen-Ming

AU - Pederson, Donald O.

PY - 1988/12/1

Y1 - 1988/12/1

N2 - Soft recovery of fast-switching p-i-n rectifiers is studied using experimental data and a novel coupled device and circuit simulator. An analytical model for determining lifetimes is presented and verified by numerical simulations. The softness factor is difficult to model analytically; hence simulations are necessary. Coupled device and circuit simulations also allow a determination of the magnitude of the inductive voltage spike that appears across the rectifier during an unclamped reverse recovery.

AB - Soft recovery of fast-switching p-i-n rectifiers is studied using experimental data and a novel coupled device and circuit simulator. An analytical model for determining lifetimes is presented and verified by numerical simulations. The softness factor is difficult to model analytically; hence simulations are necessary. Coupled device and circuit simulations also allow a determination of the magnitude of the inductive voltage spike that appears across the rectifier during an unclamped reverse recovery.

UR - http://www.scopus.com/inward/record.url?scp=0024167185&partnerID=8YFLogxK

U2 - 10.1109/IEDM.1988.32891

DO - 10.1109/IEDM.1988.32891

M3 - Conference article

AN - SCOPUS:0024167185

SP - 622

EP - 625

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

Y2 - 11 December 1988 through 14 December 1988

ER -

Simulation and modeling for soft recovery of p-i-n rectifiers

Abstract

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