Simulation and modeling for soft recovery of p-i-n rectifiers

Kartikeya Mayaram*, Ben Tien, Chen-Ming Hu, Donald O. Pederson

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

10 Scopus citations

Abstract

Soft recovery of fast-switching p-i-n rectifiers is studied using experimental data and a novel coupled device and circuit simulator. An analytical model for determining lifetimes is presented and verified by numerical simulations. The softness factor is difficult to model analytically; hence simulations are necessary. Coupled device and circuit simulations also allow a determination of the magnitude of the inductive voltage spike that appears across the rectifier during an unclamped reverse recovery.

Original languageEnglish
Pages (from-to)622-625
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1988
EventTechnical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA
Duration: 11 Dec 198814 Dec 1988

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