Simulation and Investigation of 2D FeFET Synapse with Identical Pulse Scheme for Neuromorphic Applications

Yu Jen Hsu, Yi Chin Luo, Yu Chen Chen, Che Lun Fan, Pin Su

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This work investigates the synapse response under the identical gate pulse stimulation scheme for Hf02-based ferroelectric FETs (FeFETs) with 2D channel using calibrated Monte-Carlo simulations with the nucleation-limited switching model. Our study suggests that a larger effective activation field (Ea) and a narrower spread in the distribution of Ea should be engineered to achieve a better conductance response for the FeFET synapse. In addition, adequately increasing the thickness of the interfacial layer and the ferroelectric layer of the FeFET may facilitate the accumulative switching and improve the synapse response. Besides, we have shown that it is possible to tune the conductance response by back-gating, and an adequately applied negative back-gate bias may result in better linearity and symmetry. Our study may provide insights for the FeFET synapse design crucial to the accuracy and performance of neuromorphic computing.

Original languageEnglish
Title of host publication2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665459792
DOIs
StatePublished - 2022
Event2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022 - Honolulu, United States
Duration: 11 Jun 202212 Jun 2022

Publication series

Name2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022

Conference

Conference2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022
Country/TerritoryUnited States
CityHonolulu
Period11/06/2212/06/22

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