Abstract
The simulation and fabrication of amorphous silicon silicon on Insulator-arrayed waveguide gratings (SOI-AWG) device with 59% extra high refractive index difference (δ) were investigated. The transmission spectrum of AWG's device indicated the insertion loss, crosstalk and side-lobe which were lower than -3.5dB, -25 dB and -45 dB. Selecting index of 3.5012 a-Si and 1.4482 SiO2 as core and bottom cladding layers, with design parameters represented very low loss, crosstalk, and side-lobe transmission spectral by 2D and 3D simulations. Amorphous Si films optical measurements indicated, the refractive index and extinction coefficient of the a-Si films were variable during different argon/silane flow rate and operating vacuum pressure.
Original language | English |
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Article number | 41 |
Pages (from-to) | 285-296 |
Number of pages | 12 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 5723 |
DOIs | |
State | Published - 2005 |
Event | Optical Components and Materials II - San Jose, CA, United States Duration: 24 Jan 2005 → 25 Jan 2005 |
Keywords
- Amorphous Silicon
- Array Waveguide Grating (AWG)
- Beam Propagation Method (BPM)
- DWDM
- Plasma Enhanced Chemical Vapor Deposition (PECVD)
- Silicon-on-Insulator (SOI)