SIMS depth profiling of advanced gate dielectric materials

J. Bennett*, C. Gondran, C. Sparks, P. Y. Hung, Tuo-Hung Hou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations


Depth profiling of thin gate dielectric films was studied. For SiON films profiled with 300 eV Cs + at ∼75° roughening was not observed at 3 nm, but depth scale discrepancies suggest that roughening-induced sputter rate variations are present. Profiles of ZrO 2 and HfO 2 films sputtered with Cs show a unique behavior of sputter-induced roughness going through a maximum in the Si under the oxide film. This roughness influences the Cs concentration, which in turn affects the ion yields. Profiling the ZrO 2 and HfO 2 films with O 2 + appears to be compromised by the presence of radiation-enhanced diffusion that leads to large decay lengths of the Zr + or Hf + signals.

Original languageEnglish
Pages (from-to)409-413
Number of pages5
JournalApplied Surface Science
StatePublished - 15 Jan 2003


  • Gate dielectrics
  • HfO
  • Oxynitride
  • Roughening
  • ZrO


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