Silicon-germanium structure in surrounding-gate strained silicon nanowire field effect transistors

Keyphrases

• Silicon Nanowire Field-effect Transistor (SNWFET) 100%
• Silicon-germanium 100%
• Surrounding Gate 100%
• Strained Silicon Nanowires 100%
• Barrier Height 66%
• Electrical Characteristics 33%
• Gate Length 33%
• Field-effect Transistors 33%
• Drain Current 33%
• Short Channel Effects 33%
• Gate Bias 33%
• Threshold Voltage 33%
• Leakage Current Characteristics 33%
• Transfer Characteristics 33%
• Driving Capability 33%
• High Electron Mobility 33%
• Gate Capacitance 33%
• Strained Silicon 33%

Material Science

• Silicon 100%
• Nanowire 100%
• Field Effect Transistor 100%
• Germanium 100%
• Strained Silicon 100%
• Film 25%
• Electrical Property 25%
• Capacitance 25%
• Electron Mobility 25%

Engineering

• Field-Effect Transistor 100%
• Nanowire 100%
• Barrier Height 50%
• Gate Length 25%
• Current Drain 25%
• Gate Bias 25%
• Gate Capacitance 25%