Significant improvement of GaN crystal quality with ex-situ sputtered AlN nucleation layers

Shuo Wei Chen; Young Yang; Wei Chih Wen; Heng Li; Tien-chang Lu

doi:10.1117/12.2211721

Significant improvement of GaN crystal quality with ex-situ sputtered AlN nucleation layers

Shuo Wei Chen, Young Yang, Wei Chih Wen, Heng Li, Tien-chang Lu^*

^*Corresponding author for this work

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

Ex-situ sputtered AlN nucleation layer has been demonstrated effective to significantly improve crystal quality and electrical properties of GaN epitaxy layers for GaN based Light-emitting diodes (LEDs). In this report, we have successfully reduced X-ray (102) FWHM from 240 to 110 arcsec, and (002) FWHM from 230 to 101 arcsec. In addition, reverse-bias voltage (Vr) increased around 20% with the sputtered AlN nucleation layer. Furthermore, output power of LEDs grown on sputtered AlN nucleation layer can be improved around 4.0% compared with LEDs which is with conventional GaN nucleation layer on pattern sapphire substrate (PSS).

Original language	English
Title of host publication	Light-Emitting Diodes
Subtitle of host publication	Materials, Devices, and Applications for Solid State Lighting XX
Editors	Heonsu Jeon, Li-Wei Tu, Martin Strassburg, Michael R. Krames
Publisher	SPIE
ISBN (Electronic)	9781510600034
DOIs	https://doi.org/10.1117/12.2211721
State	Published - 1 Jan 2016
Event	Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX - San Francisco, United States Duration: 15 Feb 2016 → 17 Feb 2016

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9768
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX
Country/Territory	United States
City	San Francisco
Period	15/02/16 → 17/02/16

Keywords

AlN
Internal quantum efficiency (IQE)
Light-emitting diodes (LEDs)
Multiple quantum wells (MQWs)
Sputter

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10.1117/12.2211721

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Chen, S. W., Yang, Y., Wen, W. C., Li, H., & Lu, T. (2016). Significant improvement of GaN crystal quality with ex-situ sputtered AlN nucleation layers. In H. Jeon, L.-W. Tu, M. Strassburg, & M. R. Krames (Eds.), Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX Article 97681D (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9768). SPIE. https://doi.org/10.1117/12.2211721

Chen, Shuo Wei ; Yang, Young ; Wen, Wei Chih et al. / Significant improvement of GaN crystal quality with ex-situ sputtered AlN nucleation layers. Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX. editor / Heonsu Jeon ; Li-Wei Tu ; Martin Strassburg ; Michael R. Krames. SPIE, 2016. (Proceedings of SPIE - The International Society for Optical Engineering).

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title = "Significant improvement of GaN crystal quality with ex-situ sputtered AlN nucleation layers",

abstract = "Ex-situ sputtered AlN nucleation layer has been demonstrated effective to significantly improve crystal quality and electrical properties of GaN epitaxy layers for GaN based Light-emitting diodes (LEDs). In this report, we have successfully reduced X-ray (102) FWHM from 240 to 110 arcsec, and (002) FWHM from 230 to 101 arcsec. In addition, reverse-bias voltage (Vr) increased around 20% with the sputtered AlN nucleation layer. Furthermore, output power of LEDs grown on sputtered AlN nucleation layer can be improved around 4.0% compared with LEDs which is with conventional GaN nucleation layer on pattern sapphire substrate (PSS).",

keywords = "AlN, Internal quantum efficiency (IQE), Light-emitting diodes (LEDs), Multiple quantum wells (MQWs), Sputter",

author = "Chen, {Shuo Wei} and Young Yang and Wen, {Wei Chih} and Heng Li and Tien-chang Lu",

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booktitle = "Light-Emitting Diodes",

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note = "Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX ; Conference date: 15-02-2016 Through 17-02-2016",

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Chen, SW, Yang, Y, Wen, WC, Li, H & Lu, T 2016, Significant improvement of GaN crystal quality with ex-situ sputtered AlN nucleation layers. in H Jeon, L-W Tu, M Strassburg & MR Krames (eds), Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX., 97681D, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9768, SPIE, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, San Francisco, United States, 15/02/16. https://doi.org/10.1117/12.2211721

Significant improvement of GaN crystal quality with ex-situ sputtered AlN nucleation layers. / Chen, Shuo Wei; Yang, Young; Wen, Wei Chih et al.
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX. ed. / Heonsu Jeon; Li-Wei Tu; Martin Strassburg; Michael R. Krames. SPIE, 2016. 97681D (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9768).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Significant improvement of GaN crystal quality with ex-situ sputtered AlN nucleation layers

AU - Chen, Shuo Wei

AU - Yang, Young

AU - Wen, Wei Chih

AU - Li, Heng

AU - Lu, Tien-chang

PY - 2016/1/1

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N2 - Ex-situ sputtered AlN nucleation layer has been demonstrated effective to significantly improve crystal quality and electrical properties of GaN epitaxy layers for GaN based Light-emitting diodes (LEDs). In this report, we have successfully reduced X-ray (102) FWHM from 240 to 110 arcsec, and (002) FWHM from 230 to 101 arcsec. In addition, reverse-bias voltage (Vr) increased around 20% with the sputtered AlN nucleation layer. Furthermore, output power of LEDs grown on sputtered AlN nucleation layer can be improved around 4.0% compared with LEDs which is with conventional GaN nucleation layer on pattern sapphire substrate (PSS).

AB - Ex-situ sputtered AlN nucleation layer has been demonstrated effective to significantly improve crystal quality and electrical properties of GaN epitaxy layers for GaN based Light-emitting diodes (LEDs). In this report, we have successfully reduced X-ray (102) FWHM from 240 to 110 arcsec, and (002) FWHM from 230 to 101 arcsec. In addition, reverse-bias voltage (Vr) increased around 20% with the sputtered AlN nucleation layer. Furthermore, output power of LEDs grown on sputtered AlN nucleation layer can be improved around 4.0% compared with LEDs which is with conventional GaN nucleation layer on pattern sapphire substrate (PSS).

KW - AlN

KW - Internal quantum efficiency (IQE)

KW - Light-emitting diodes (LEDs)

KW - Multiple quantum wells (MQWs)

KW - Sputter

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Chen SW, Yang Y, Wen WC, Li H, Lu T. Significant improvement of GaN crystal quality with ex-situ sputtered AlN nucleation layers. In Jeon H, Tu LW, Strassburg M, Krames MR, editors, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX. SPIE. 2016. 97681D. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2211721

Significant improvement of GaN crystal quality with ex-situ sputtered AlN nucleation layers

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Keywords

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