Significance of dimensionality and dynamical screening on hot carrier relaxation in bulk GaAs and quantum wells

H. C. Lee; Kien-Wen Sun; C. P. Lee

doi:10.1016/j.ssc.2003.08.012

Significance of dimensionality and dynamical screening on hot carrier relaxation in bulk GaAs and quantum wells

H. C. Lee^*, Kien-Wen Sun, C. P. Lee

^*Corresponding author for this work

Department of Applied Chemistry

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We have found theoretically that the reduced dimensionality from bulk GaAs to quantum wells has a strong effect on hot carrier relaxations at highly excited carrier densities. The distinct density of state and the dynamical screening cause hot carriers in quantum wells to relax significantly slower than in the bulk when the carrier density is above a critical value of 2 × 10¹⁸ cm^-3. With the random phase approximation, the dynamical screening in quantum wells appears to be much stronger than that in the bulk and as important as the hot phonon effect at high carrier densities. We also found that the dependence of the average energy-loss rates on the well width in quantum wells becomes more appreciable when Al compositions are high.

Original language	English
Pages (from-to)	245-250
Number of pages	6
Journal	Solid State Communications
Volume	128
Issue number	6-7
DOIs	https://doi.org/10.1016/j.ssc.2003.08.012
State	Published - 1 Nov 2003

Keywords

A. Quantum wells
A. Semiconductors
D. Dielectric response
D. Electron phonon interactions

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10.1016/j.ssc.2003.08.012

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title = "Significance of dimensionality and dynamical screening on hot carrier relaxation in bulk GaAs and quantum wells",

abstract = "We have found theoretically that the reduced dimensionality from bulk GaAs to quantum wells has a strong effect on hot carrier relaxations at highly excited carrier densities. The distinct density of state and the dynamical screening cause hot carriers in quantum wells to relax significantly slower than in the bulk when the carrier density is above a critical value of 2 × 1018 cm-3. With the random phase approximation, the dynamical screening in quantum wells appears to be much stronger than that in the bulk and as important as the hot phonon effect at high carrier densities. We also found that the dependence of the average energy-loss rates on the well width in quantum wells becomes more appreciable when Al compositions are high.",

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T1 - Significance of dimensionality and dynamical screening on hot carrier relaxation in bulk GaAs and quantum wells

AU - Lee, H. C.

AU - Sun, Kien-Wen

AU - Lee, C. P.

PY - 2003/11/1

Y1 - 2003/11/1

N2 - We have found theoretically that the reduced dimensionality from bulk GaAs to quantum wells has a strong effect on hot carrier relaxations at highly excited carrier densities. The distinct density of state and the dynamical screening cause hot carriers in quantum wells to relax significantly slower than in the bulk when the carrier density is above a critical value of 2 × 1018 cm-3. With the random phase approximation, the dynamical screening in quantum wells appears to be much stronger than that in the bulk and as important as the hot phonon effect at high carrier densities. We also found that the dependence of the average energy-loss rates on the well width in quantum wells becomes more appreciable when Al compositions are high.

AB - We have found theoretically that the reduced dimensionality from bulk GaAs to quantum wells has a strong effect on hot carrier relaxations at highly excited carrier densities. The distinct density of state and the dynamical screening cause hot carriers in quantum wells to relax significantly slower than in the bulk when the carrier density is above a critical value of 2 × 1018 cm-3. With the random phase approximation, the dynamical screening in quantum wells appears to be much stronger than that in the bulk and as important as the hot phonon effect at high carrier densities. We also found that the dependence of the average energy-loss rates on the well width in quantum wells becomes more appreciable when Al compositions are high.

KW - A. Quantum wells

KW - A. Semiconductors

KW - D. Dielectric response

KW - D. Electron phonon interactions

UR - http://www.scopus.com/inward/record.url?scp=0141621083&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2003.08.012

DO - 10.1016/j.ssc.2003.08.012

M3 - Article

AN - SCOPUS:0141621083

SN - 0038-1098

VL - 128

SP - 245

EP - 250

JO - Solid State Communications

JF - Solid State Communications

IS - 6-7

ER -

Significance of dimensionality and dynamical screening on hot carrier relaxation in bulk GaAs and quantum wells

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Keywords

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