SiGe pMOSFET's with Gate Oxide Fabricated by Microwave Electron Cyclotron Resonance Plasma Processing

Pei-Wen Li; E. S. Yang; Y. F. Yang; J. O. Chu; B. S. Meyerson

doi:10.1109/55.320982

SiGe pMOSFET's with Gate Oxide Fabricated by Microwave Electron Cyclotron Resonance Plasma Processing

Pei-Wen Li, E. S. Yang, Y. F. Yang, J. O. Chu, B. S. Meyerson

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

A new process, electron cyclotron resonance (ECR) microwave plasma oxidation, has been developed to produce a gate-quality oxide directly on SiGe alloys. One µm Al gate Sio.86 Geo.15p-metal-oxide-semiconductor field-effect-transistors (pMOSFET‘s) with ECR-grown gate oxide have been fabricated. It is found that saturation transconductance increases from 48 mS/mm at 300 K to 60 mS/mm at 77 K. Low field hole mobilities of 167 cm2cm2N-s-s at 300 K and 530 cm2N -s at 77 K have been obtained.

Original language	English
Pages (from-to)	402-405
Number of pages	4
Journal	Ieee Electron Device Letters
Volume	15
Issue number	10
DOIs	https://doi.org/10.1109/55.320982
State	Published - Oct 1994

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title = "SiGe pMOSFET's with Gate Oxide Fabricated by Microwave Electron Cyclotron Resonance Plasma Processing",

abstract = "A new process, electron cyclotron resonance (ECR) microwave plasma oxidation, has been developed to produce a gate-quality oxide directly on SiGe alloys. One µm Al gate Sio.86 Geo.15p-metal-oxide-semiconductor field-effect-transistors (pMOSFET{\textquoteleft}s) with ECR-grown gate oxide have been fabricated. It is found that saturation transconductance increases from 48 mS/mm at 300 K to 60 mS/mm at 77 K. Low field hole mobilities of 167 cm2cm2N-s-s at 300 K and 530 cm2N -s at 77 K have been obtained.",

author = "Pei-Wen Li and Yang, {E. S.} and Yang, {Y. F.} and Chu, {J. O.} and Meyerson, {B. S.}",

year = "1994",

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AU - Li, Pei-Wen

AU - Yang, E. S.

AU - Yang, Y. F.

AU - Chu, J. O.

AU - Meyerson, B. S.

PY - 1994/10

Y1 - 1994/10

N2 - A new process, electron cyclotron resonance (ECR) microwave plasma oxidation, has been developed to produce a gate-quality oxide directly on SiGe alloys. One µm Al gate Sio.86 Geo.15p-metal-oxide-semiconductor field-effect-transistors (pMOSFET‘s) with ECR-grown gate oxide have been fabricated. It is found that saturation transconductance increases from 48 mS/mm at 300 K to 60 mS/mm at 77 K. Low field hole mobilities of 167 cm2cm2N-s-s at 300 K and 530 cm2N -s at 77 K have been obtained.

AB - A new process, electron cyclotron resonance (ECR) microwave plasma oxidation, has been developed to produce a gate-quality oxide directly on SiGe alloys. One µm Al gate Sio.86 Geo.15p-metal-oxide-semiconductor field-effect-transistors (pMOSFET‘s) with ECR-grown gate oxide have been fabricated. It is found that saturation transconductance increases from 48 mS/mm at 300 K to 60 mS/mm at 77 K. Low field hole mobilities of 167 cm2cm2N-s-s at 300 K and 530 cm2N -s at 77 K have been obtained.

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JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 10

ER -

SiGe pMOSFET's with Gate Oxide Fabricated by Microwave Electron Cyclotron Resonance Plasma Processing

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