Sidewall geometric effect on the performance of AlGaN-based deep-ultraviolet light-emitting diodes

Kang Wei Peng; Ming Chun Tseng; Su Hui Lin; Shouqiang Lai; Meng Chun Shen; Dong Sing Wuu; Ray Hua Horng; Zhong Chen; Tingzhu Wu

doi:10.1364/OE.475219

Sidewall geometric effect on the performance of AlGaN-based deep-ultraviolet light-emitting diodes

Kang Wei Peng, Ming Chun Tseng, Su Hui Lin, Shouqiang Lai, Meng Chun Shen, Dong Sing Wuu, Ray Hua Horng, Zhong Chen, Tingzhu Wu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

In this study, deep-ultraviolet light-emitting diodes (DUV LEDs) with different chip sidewall geometries (CSGs) are investigated. The structure had two types of chip sidewall designs that combined DUV LEDs with the same p-GaN thickness. By comparing the differences of the characteristics such as the external quantum efficiency droops, light output power, light extraction efficiency (LEE), and junction temperature of these DUV LEDs, the self-heated effect and light-tracing simulation results have been clearly demonstrated to explain the inclined sidewalls that provide more possibility pathway for photons escape to increase the LEE of LEDs; thus, the DUV LEDs with the CSG presented improved performance. These results demonstrate the potential of CSG for DUV LED applications.

Original language	English
Pages (from-to)	47792-47800
Number of pages	9
Journal	Optics Express
Volume	30
Issue number	26
DOIs	https://doi.org/10.1364/OE.475219
State	Published - 19 Dec 2022

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title = "Sidewall geometric effect on the performance of AlGaN-based deep-ultraviolet light-emitting diodes",

abstract = "In this study, deep-ultraviolet light-emitting diodes (DUV LEDs) with different chip sidewall geometries (CSGs) are investigated. The structure had two types of chip sidewall designs that combined DUV LEDs with the same p-GaN thickness. By comparing the differences of the characteristics such as the external quantum efficiency droops, light output power, light extraction efficiency (LEE), and junction temperature of these DUV LEDs, the self-heated effect and light-tracing simulation results have been clearly demonstrated to explain the inclined sidewalls that provide more possibility pathway for photons escape to increase the LEE of LEDs; thus, the DUV LEDs with the CSG presented improved performance. These results demonstrate the potential of CSG for DUV LED applications.",

author = "Peng, {Kang Wei} and Tseng, {Ming Chun} and Lin, {Su Hui} and Shouqiang Lai and Shen, {Meng Chun} and Wuu, {Dong Sing} and Horng, {Ray Hua} and Zhong Chen and Tingzhu Wu",

note = "Publisher Copyright: {\textcopyright} 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement.",

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month = dec,

day = "19",

doi = "10.1364/OE.475219",

language = "English",

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TY - JOUR

T1 - Sidewall geometric effect on the performance of AlGaN-based deep-ultraviolet light-emitting diodes

AU - Peng, Kang Wei

AU - Tseng, Ming Chun

AU - Lin, Su Hui

AU - Lai, Shouqiang

AU - Shen, Meng Chun

AU - Wuu, Dong Sing

AU - Horng, Ray Hua

AU - Chen, Zhong

AU - Wu, Tingzhu

PY - 2022/12/19

Y1 - 2022/12/19

N2 - In this study, deep-ultraviolet light-emitting diodes (DUV LEDs) with different chip sidewall geometries (CSGs) are investigated. The structure had two types of chip sidewall designs that combined DUV LEDs with the same p-GaN thickness. By comparing the differences of the characteristics such as the external quantum efficiency droops, light output power, light extraction efficiency (LEE), and junction temperature of these DUV LEDs, the self-heated effect and light-tracing simulation results have been clearly demonstrated to explain the inclined sidewalls that provide more possibility pathway for photons escape to increase the LEE of LEDs; thus, the DUV LEDs with the CSG presented improved performance. These results demonstrate the potential of CSG for DUV LED applications.

AB - In this study, deep-ultraviolet light-emitting diodes (DUV LEDs) with different chip sidewall geometries (CSGs) are investigated. The structure had two types of chip sidewall designs that combined DUV LEDs with the same p-GaN thickness. By comparing the differences of the characteristics such as the external quantum efficiency droops, light output power, light extraction efficiency (LEE), and junction temperature of these DUV LEDs, the self-heated effect and light-tracing simulation results have been clearly demonstrated to explain the inclined sidewalls that provide more possibility pathway for photons escape to increase the LEE of LEDs; thus, the DUV LEDs with the CSG presented improved performance. These results demonstrate the potential of CSG for DUV LED applications.

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U2 - 10.1364/OE.475219

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SN - 1094-4087

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SP - 47792

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JO - Optics Express

JF - Optics Express

IS - 26

ER -

Sidewall geometric effect on the performance of AlGaN-based deep-ultraviolet light-emitting diodes

Abstract

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