Si-containing crystalline carbon nitride derived from microwave plasma-enhanced chemical vapor deposition

Keyphrases

• Silicon Nitride 100%
• Microwave Plasma Chemical Vapor Deposition (MPCVD) 100%
• Substrate Temperature 100%
• Crystalline Carbon Nitride 100%
• Si-containing 100%
• Wafer 50%
• Auger Electron Spectroscopy 50%
• X-ray Photoelectron Spectroscopy 50%
• Carbon Atom 50%
• Bonding Structure 50%
• Large Grain 50%
• Gas Mixture 50%
• Raman Spectroscopy 50%
• Chemical Vapor Deposition Technique 50%
• Nitrogen Atom 50%
• Electron Microscopy 50%
• C3N4 50%
• Hard Materials 50%
• Microscopic Investigation 50%
• Raman Spectra 50%
• Substitutional Element 50%
• Crystallites 50%
• X-ray Photoelectron Spectroscopy Analysis 50%
• Core Level 50%
• Phase Content 50%
• C 1s 50%
• Multiple Bonding 50%
• Nitride Complexes 50%
• CRISTAL 50%
• Carbon Nitride Thin Film 50%
• High Substrate Temperature 50%

Material Science

• Film 100%
• Plasma-Enhanced Chemical Vapor Deposition 100%
• Carbon Nitride 100%
• Silicon Nitride 50%
• X-Ray Photoelectron Spectroscopy 50%
• Thin Films 25%
• Nitride Compound 25%
• Scanning Electron Microscopy 25%
• Electron Microscopy 25%
• Auger Electron Spectroscopy 25%
• Raman Spectroscopy 25%
• Gas Mixture 25%
• Crystallite 25%