Si-based Sub-THz heterodyne imaging circuits

Daekeun Yoon, Kiryong Song, Jungsoo Kim, Jae Sung Rieh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

This paper presents an analysis to compare the heterodyne detection and the direct detection in terms of their noise performance, particularly for high frequency applications where low noise amplifiers can hardly be employed. The results show that the heterodyne detection provides superior noise performance, especially when a high gain IF amplifier is inserted before the IF detector. To verify the analysis, a sub-THz heterodyne imaging receiver has been developed based on 65-nm Si CMOS technology. It exhibits a noise equivalent temperature (NEP) as low as 0.9 pW/Hz0.5 in absence of an RF low noise amplifier, experimentally verifying the excellent noise performance expected from the heterodyne detection.

Original languageEnglish
Title of host publication2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1136-1138
Number of pages3
ISBN (Electronic)9784902339314
StatePublished - 25 Mar 2014
Event2014 Asia-Pacific Microwave Conference, APMC 2014 - Sendai, Japan
Duration: 4 Nov 20147 Nov 2014

Publication series

Name2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014

Conference

Conference2014 Asia-Pacific Microwave Conference, APMC 2014
Country/TerritoryJapan
CitySendai
Period4/11/147/11/14

Keywords

  • Heterodyning
  • Imaging
  • Silicon

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