TY - GEN
T1 - Short-wavelength responses enhanced porous-silicon heterojunction thin film photo-transistor
AU - Wang, Y. C.
AU - Lin, Bor-Shyh
AU - Chan, Ming-Che
PY - 2014/6/18
Y1 - 2014/6/18
N2 - The paper proposed a device with Al / Porous-Silicon / c-Si structures were fabricated and characterized. Experimental results showed that the short-wavelength responses in the developed devices were enhanced as compared to the silicon based homojunction transistors, this comparably medium optical gain indicated that the developed Porous-Silicon / c-Si heterojunction thin film photo-transistor got potential for practical applications The paper proposed a shortwavelength responses enhanced of the Si-based thin film phototransistors can be enhanced by introducing thin porous-layer as the base region of transistor. The porous process of device manufacture is suitable for applications in design of visible-light sensitive phototransistors. Therefore, the more applications of short-wavelength are the trend for bio-medical-detection.
AB - The paper proposed a device with Al / Porous-Silicon / c-Si structures were fabricated and characterized. Experimental results showed that the short-wavelength responses in the developed devices were enhanced as compared to the silicon based homojunction transistors, this comparably medium optical gain indicated that the developed Porous-Silicon / c-Si heterojunction thin film photo-transistor got potential for practical applications The paper proposed a shortwavelength responses enhanced of the Si-based thin film phototransistors can be enhanced by introducing thin porous-layer as the base region of transistor. The porous process of device manufacture is suitable for applications in design of visible-light sensitive phototransistors. Therefore, the more applications of short-wavelength are the trend for bio-medical-detection.
UR - http://www.scopus.com/inward/record.url?scp=85087239756&partnerID=8YFLogxK
U2 - 10.1364/fbta.2014.jf2a.18
DO - 10.1364/fbta.2014.jf2a.18
M3 - Conference contribution
AN - SCOPUS:85116183600
T3 - Optoelectronic Devices and Integration, OEDI 2014
SP - 1
EP - 3
BT - Fiber-Based Technologies and Applications, FBTA 2014
PB - Optical Society of America (OSA)
T2 - Fiber-Based Technologies and Applications, FBTA 2014
Y2 - 18 June 2014 through 21 June 2014
ER -