Abstract
Hydrogenated amorphous silicon (a-Si:H) films were deposited at high growth rates by increasing the rf power density in a (SiH4+H2) discharge, while powder formation due to gas phase polymerization was controlled by heating the cathode together with the anode. A combination of Raman scattering, infrared absorption, and small angle x-ray scattering experiments was used to study the short-range order and microstructure of films deposited in different (dusty or otherwise) plasma conditions. The results were correlated with initial and light-soaked photoresponse to demonstrate that films with more microstructure and less short-range order were generally poorer.
Original language | English |
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Pages (from-to) | 5208-5213 |
Number of pages | 6 |
Journal | Journal of Applied Physics |
Volume | 76 |
Issue number | 9 |
DOIs | |
State | Published - 1994 |