Short-range order, microstructure and their correlation with light-induced degradation in hydrogenated amorphous silicon deposited at high growth rates by cathode heating technique

S. Chattopadhyay*, S. N. Sharma, Ratnabali Banerjee, D. M. Bhusari, S. T. Kshirsagar, Yan Chen, D. L. Williamson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

Hydrogenated amorphous silicon (a-Si:H) films were deposited at high growth rates by increasing the rf power density in a (SiH4+H2) discharge, while powder formation due to gas phase polymerization was controlled by heating the cathode together with the anode. A combination of Raman scattering, infrared absorption, and small angle x-ray scattering experiments was used to study the short-range order and microstructure of films deposited in different (dusty or otherwise) plasma conditions. The results were correlated with initial and light-soaked photoresponse to demonstrate that films with more microstructure and less short-range order were generally poorer.

Original languageEnglish
Pages (from-to)5208-5213
Number of pages6
JournalJournal of Applied Physics
Volume76
Issue number9
DOIs
StatePublished - 1994

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