Short-Range Order and Charge Transport in SiO x: Experiment and Numerical Simulation

V. A. Gritsenko; Yu N. Novikov; Albert Chin

doi:10.1134/S1063785018060196

Short-Range Order and Charge Transport in SiO_x: Experiment and Numerical Simulation

V. A. Gritsenko^*, Yu N. Novikov, Albert Chin

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

Abstract

The structure of nonstoichiometric silicon oxide (SiO_x) has been studied by the methods of highresolution X-ray photoelectron spectroscopy and fundamental optical-absorption spectroscopy. The conductivity of SiO_x (x = 1.4 and 1.6) films has been measured in a wide range of electric fields and temperatures. Experimental data are described in terms of the proposed SiO_x structure model based on the concept of fluctuating chemical composition leading to nanoscale fluctuations in the electric potential. The maximum amplitude of potential fluctuations amounts to 2.6 eV for electrons and 3.8 eV for holes. In the framework of this model, the observed conductivity of SiO_x is described by the Shklovskii–Efros theory of percolation in inhomogeneous media. The characteristic spatial scale of potential fluctuations in SiO_x films is about 3 nm. The electron-percolation energy in SiO_1.4 and SiO_1.6 films is estimated to be 0.5 and 0.8 eV, respectively.

Original language	English
Pages (from-to)	541-544
Number of pages	4
Journal	Technical Physics Letters
Volume	44
Issue number	6
DOIs	https://doi.org/10.1134/S1063785018060196
State	Published - 1 Jun 2018

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title = "Short-Range Order and Charge Transport in SiO x: Experiment and Numerical Simulation",

abstract = "The structure of nonstoichiometric silicon oxide (SiOx) has been studied by the methods of highresolution X-ray photoelectron spectroscopy and fundamental optical-absorption spectroscopy. The conductivity of SiOx (x = 1.4 and 1.6) films has been measured in a wide range of electric fields and temperatures. Experimental data are described in terms of the proposed SiOx structure model based on the concept of fluctuating chemical composition leading to nanoscale fluctuations in the electric potential. The maximum amplitude of potential fluctuations amounts to 2.6 eV for electrons and 3.8 eV for holes. In the framework of this model, the observed conductivity of SiOx is described by the Shklovskii–Efros theory of percolation in inhomogeneous media. The characteristic spatial scale of potential fluctuations in SiOx films is about 3 nm. The electron-percolation energy in SiO1.4 and SiO1.6 films is estimated to be 0.5 and 0.8 eV, respectively.",

author = "Gritsenko, {V. A.} and Novikov, {Yu N.} and Albert Chin",

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T1 - Short-Range Order and Charge Transport in SiO x

T2 - Experiment and Numerical Simulation

AU - Gritsenko, V. A.

AU - Novikov, Yu N.

AU - Chin, Albert

PY - 2018/6/1

Y1 - 2018/6/1

N2 - The structure of nonstoichiometric silicon oxide (SiOx) has been studied by the methods of highresolution X-ray photoelectron spectroscopy and fundamental optical-absorption spectroscopy. The conductivity of SiOx (x = 1.4 and 1.6) films has been measured in a wide range of electric fields and temperatures. Experimental data are described in terms of the proposed SiOx structure model based on the concept of fluctuating chemical composition leading to nanoscale fluctuations in the electric potential. The maximum amplitude of potential fluctuations amounts to 2.6 eV for electrons and 3.8 eV for holes. In the framework of this model, the observed conductivity of SiOx is described by the Shklovskii–Efros theory of percolation in inhomogeneous media. The characteristic spatial scale of potential fluctuations in SiOx films is about 3 nm. The electron-percolation energy in SiO1.4 and SiO1.6 films is estimated to be 0.5 and 0.8 eV, respectively.

AB - The structure of nonstoichiometric silicon oxide (SiOx) has been studied by the methods of highresolution X-ray photoelectron spectroscopy and fundamental optical-absorption spectroscopy. The conductivity of SiOx (x = 1.4 and 1.6) films has been measured in a wide range of electric fields and temperatures. Experimental data are described in terms of the proposed SiOx structure model based on the concept of fluctuating chemical composition leading to nanoscale fluctuations in the electric potential. The maximum amplitude of potential fluctuations amounts to 2.6 eV for electrons and 3.8 eV for holes. In the framework of this model, the observed conductivity of SiOx is described by the Shklovskii–Efros theory of percolation in inhomogeneous media. The characteristic spatial scale of potential fluctuations in SiOx films is about 3 nm. The electron-percolation energy in SiO1.4 and SiO1.6 films is estimated to be 0.5 and 0.8 eV, respectively.

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VL - 44

SP - 541

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JO - Technical Physics Letters

JF - Technical Physics Letters

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ER -

Short-Range Order and Charge Transport in SiO_x: Experiment and Numerical Simulation

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