@inproceedings{74242f7aa3094ad29388bc5e3841784d,
title = "Short-channel ZnON thin-film transistors with film profile engineering",
abstract = "Short-channel zinc oxynitride (ZnON) thin-film transistors (TFTs) were fabricated based on the film profile engineering in combination with e-beam lithographical patterning. ZnON films were deposited using reactive magnetron sputtering in N2/O2 ambient and exhibit a Hall mobility of 95 cm2/V-s. A ZnON TFT with channel length of 147nm shows high on/off current ratio of 5×107 and field-effect mobility of 9.1 cm2/Vs, which are superior or comparable to their counterparts of IGZO or ZnO TFTs.",
keywords = "Thin film transistors, Atmospheric measurements, Magnetic field measurement, Thickness measurement, Particle measurements, Magnetic films, Tin",
author = "Kuan, {Chin I.} and Horng-Chih Lin and Pei-Wen Li and Huang, {Tiao Yuan}",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 ; Conference date: 12-06-2016 Through 13-06-2016",
year = "2016",
month = sep,
day = "27",
doi = "10.1109/SNW.2016.7577988",
language = "American English",
series = "2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "66--67",
booktitle = "2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016",
address = "United States",
}