Short-Channel Effects in 2D Negative-Capacitance Field-Effect Transistors

Wei Xiang You; Chih Peng Tsai; Pin Su

doi:10.1109/TED.2018.2805716

Short-Channel Effects in 2D Negative-Capacitance Field-Effect Transistors

Wei Xiang You, Chih Peng Tsai, Pin Su^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

Through numerical simulations corroborated by an analytical subthreshold model considering drain coupling, this paper systematically investigates the short-channel effects in negative-capacitance FETs with 2D MoS₂ channel (2D-NCFET). Our study indicates that, due to the impact of drain coupling on the negative-capacitance effect, the 2D-NCFET exhibits distinct short-channel behaviors such as improved average subthreshold swing and threshold-voltage roll-up with decreasing gate length. In addition, the fringe field through the high-k interlayer dielectric can significantly alter the subthreshold characteristics of the short-channel 2D-NCFET, and hence needs to be carefully taken into account. Our study may provide insights for device design using negative-capacitance FETs.

Original language	English
Pages (from-to)	1604-1610
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	4
DOIs	https://doi.org/10.1109/TED.2018.2805716
State	Published - 1 Apr 2018

Keywords

2D semiconductors
Landau-Khalatnikov (L-K) equation
ferroelectric FET
high-k gate dielectrics
negative-capacitance field-effect transistor (NCFET)
short-channel effects
subthreshold model
transition-metal-dichalcogenide (TMD)

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10.1109/TED.2018.2805716

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title = "Short-Channel Effects in 2D Negative-Capacitance Field-Effect Transistors",

abstract = "Through numerical simulations corroborated by an analytical subthreshold model considering drain coupling, this paper systematically investigates the short-channel effects in negative-capacitance FETs with 2D MoS2 channel (2D-NCFET). Our study indicates that, due to the impact of drain coupling on the negative-capacitance effect, the 2D-NCFET exhibits distinct short-channel behaviors such as improved average subthreshold swing and threshold-voltage roll-up with decreasing gate length. In addition, the fringe field through the high-k interlayer dielectric can significantly alter the subthreshold characteristics of the short-channel 2D-NCFET, and hence needs to be carefully taken into account. Our study may provide insights for device design using negative-capacitance FETs.",

keywords = "2D semiconductors, Landau-Khalatnikov (L-K) equation, ferroelectric FET, high-k gate dielectrics, negative-capacitance field-effect transistor (NCFET), short-channel effects, subthreshold model, transition-metal-dichalcogenide (TMD)",

author = "You, {Wei Xiang} and Tsai, {Chih Peng} and Pin Su",

year = "2018",

month = apr,

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doi = "10.1109/TED.2018.2805716",

language = "English",

volume = "65",

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journal = "IEEE Transactions on Electron Devices",

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publisher = "IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC",

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T1 - Short-Channel Effects in 2D Negative-Capacitance Field-Effect Transistors

AU - You, Wei Xiang

AU - Tsai, Chih Peng

AU - Su, Pin

PY - 2018/4/1

Y1 - 2018/4/1

N2 - Through numerical simulations corroborated by an analytical subthreshold model considering drain coupling, this paper systematically investigates the short-channel effects in negative-capacitance FETs with 2D MoS2 channel (2D-NCFET). Our study indicates that, due to the impact of drain coupling on the negative-capacitance effect, the 2D-NCFET exhibits distinct short-channel behaviors such as improved average subthreshold swing and threshold-voltage roll-up with decreasing gate length. In addition, the fringe field through the high-k interlayer dielectric can significantly alter the subthreshold characteristics of the short-channel 2D-NCFET, and hence needs to be carefully taken into account. Our study may provide insights for device design using negative-capacitance FETs.

AB - Through numerical simulations corroborated by an analytical subthreshold model considering drain coupling, this paper systematically investigates the short-channel effects in negative-capacitance FETs with 2D MoS2 channel (2D-NCFET). Our study indicates that, due to the impact of drain coupling on the negative-capacitance effect, the 2D-NCFET exhibits distinct short-channel behaviors such as improved average subthreshold swing and threshold-voltage roll-up with decreasing gate length. In addition, the fringe field through the high-k interlayer dielectric can significantly alter the subthreshold characteristics of the short-channel 2D-NCFET, and hence needs to be carefully taken into account. Our study may provide insights for device design using negative-capacitance FETs.

KW - 2D semiconductors

KW - Landau-Khalatnikov (L-K) equation

KW - ferroelectric FET

KW - high-k gate dielectrics

KW - negative-capacitance field-effect transistor (NCFET)

KW - short-channel effects

KW - subthreshold model

KW - transition-metal-dichalcogenide (TMD)

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JF - IEEE Transactions on Electron Devices

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Short-Channel Effects in 2D Negative-Capacitance Field-Effect Transistors

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Keywords

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